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Details, datasheet, quote on part number:RMWM38001
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| Part: | RMWM38001 |
| Category: | RF & Microwaves => Mixers => MMIC |
| Description: | Circuit Description = 38 GHZ Mixer Mmic ;; Frequency = 37-40 GHZ ;; Conversion Loss = 5 DB, 8 DB |
| Company: | Raytheon RF Components |
| Datasheet: | Download RMWM38001 datasheet File size : 370 kB |
| Request For quote: | Find where to buy RMWM38001
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Datasheet text preview:
RMWM38001
38 GHz Mixer MMIC
PRODUCT INFORMATION
Description
The RMWM38001 is a 38 GHz Mixer designed to be used in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon RF Components amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWM38001 is a GaAs MMIC diode mixer utilizing Raytheon RF Components' 0.25µm power PHEMT process. The MMIC can be used as both an Upconverter and a Downconverter and is sufficiently versatile to serve in a variety of mixer applications.
Features
4 mil substrate Conversion loss 5 dB (Upconverter) Conversion loss 8 dB (Downconverter) No DC bias required Chip size 1.4 mm x 1.4 mm
Absolute Ratings
Parameter RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range
Symbol PIN TC Tstg
Value +25 -30 to +85 -55 to +125
Un i t dBm °C °C
Electrical Characteristics
(At 25°C), 5 0 system, LO = +12 dBm
Parameter RF Frequency Range LO Frequency Range IF Frequency Range LO Drive Power Up Conversion Loss Down Conversion Loss1 Conversion Loss Variation vs Freq
Min 37
Typ 32 - 35 4.7 - 5.3 12 5 8 3
Max 40
Un it GHz GHz GHz d Bm dB dB dB
16 10
Notes: 1. Device 100% RF tested as downconverter only. LO drive = +12 dBm, RF Pin = -10 dBm, IF = 5 GHz. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 14, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMWM38001
38 GHz Mixer MMIC
PRODUCT INFORMATION
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material.
Up-Conversion
MMIC Chip RF OUT IF IN RF IN
Figure 1 Functional Block Diagram
Down-Conversion
MMIC Chip IF OUT
Ground (Back of Chip) LO IN
Ground (Back of Chip)
LO IN
Figure 2 Chip Layout and Bond Pad Locations Chip Size is 1.4 mm x 1.4 mm x 100 µm. Back of chip is RF ground
Dimensions in mm
1.4
0.0
0.7205
0.863
1.4 1.4
0.3055 0.163 0.0 0.0 1.4
0.3065 0.164 0.0
Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 14, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMWM38001
38 GHz Mixer MMIC
PRODUCT INFORMATION
Figure 3 Recommended Assembly Diagram1
IF Input /Output 5 mil Thick Alumina 50-Ohm Die-Attach 80Au/20Sn
5mil Thick Alumina 50-Ohm
5 mil Thick Alumina 50-Ohm
LO Input
RF Input /Output
2 mil Gap
L< 0.015" (6 Places)
Note: 1. Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Recommended Procedure for Operation
CAUTION: THIS IS AN ESD SENSITIVE DEVICE The RMWM38001 does not require DC bias. Apply RF input signal at the appropriate frequency band and input drive level.
Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised March 14, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
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