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Details, datasheet, quote on part number:RMWP23001
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| Part: | RMWP23001 |
| Category: | RF & Microwaves => Amplifiers => Power Amplifiers => MMIC |
| Description: | Circuit Description = 21-24 GHZ Power Amplifier Mmic ;; Frequency = 21-24 GHZ ;; SS Gain = 22.5 DB ;; Pout @ 1dB = 24 DBM |
| Company: | Raytheon RF Components |
| Datasheet: | Download RMWP23001 datasheet File size : 380 kB |
| Request For quote: | Find where to buy RMWP23001
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Datasheet text preview:
RMWP23001
21-24 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Description
The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23 GHz transmit/receive chipset. The RMWP23001 utilizes Raytheon's 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications.
Features
4 mil substrate Small-signal gain 22.5 dB (typ.) 1dB compressed Pout 23.5 dBm (typ.) Chip size 2.6 mm x 1.2 mm
Absolute Maximum Ratings
Parameter Positive DC voltage (+4 V Typical) Negative DC voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside)
Symbol Vd Vg Vdg ID PIN TC Tstg Rjc
Value +6 -2 8 607 +8 -30 to +85 -55 to +125 36.5
Units Volts Volts Volts mA dBm °C °C °C/W
Electrical Characteristics
(At 25°C), 50 system, Vd = +4 V, Quiescent Current Idq = 400 mA
Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal at Pi n= -8 dBm Gain Variation vs. Frequency Gain at 1dB Compression Power Output at 1dB Compression Power Output Saturated: Pin = +3 dBm Drain Current at Pin = -8 dBm
Min 21
Typ -0 .3
Max Unit 24 GHz V dB dB dB dBm dBm mA
20
22.5 1.0 21.5 24
22
25 400
Parameter Min Drain Current at 1 dB Compression Drain Current at Saturated: Pin = +3 dBm Power Added Efficiency (PAE): at P1 dB Input Return Loss (Pin = -8 dBm) Output Return Loss (Pin = -8 dBm) OIP3 Noise Figure
Typ 430 410 15 14 12 33 8
Max Unit mA mA % dB dB dBm dB
Func tional Block Diagram
MMIC Chip RF IN
Drain Supply Vd1
Drain Supply Vd2
Drain Supply Vd3
Drain Supply Vd4
RF OUT
Note: 1. Typical range of gate voltage is -0.7 to -0.05 V to set Idq of 400 mA.
Ground (Back of Chip)
Gate Supply Vg
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMWP23001
21-24 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typically 2 mil between the chip and the substrate material. CAUTION: LOSS OF GATE VOLTAGES (Vg) WHILE DRAIN VOLTAGES (Vd) IS PRESENT MAY DAMAGE THE AMPLIFIER CHIP. The following sequence of steps must be followed to properly test the amplifier. Step 1: Turn off RF input power. Step 2: Connect the DC supply grounds to the grounds of the chip carrier. Slowly apply negative gate bias supply voltage of -1.5 V to Vg. Step 3: Slowly apply positive drain bias supply voltage of +4 V to Vd. Step 4: Adjust gate bias voltage to set the quiescent current of Idq = 400 mA. Step 5: After the bias condition is established, RF input signal may now be applied at the appropriate frequency band. Step 6: Follow turn-off sequence of: (i) Turn off RF input power, (ii) Turn down and off drain voltage (Vd), (iii) Turn down and off gate bias voltage (Vg).
Recommended Procedure
for Biasing and Operation
Chip Layout and Bond Pad Loc ations
Chip Layout and Bond Pad Locations Chip Size is 2.6 mm x 1.2 mm x 100 µm. Back of chip is RF and DC ground
Dimensions in mm
0.0 0.82 1.072 1.756 2.076 2.6
1.2
1.2
0.791 0.637 0.482 0.685 0.53 0.376
0.0 0.0 0.55 2.6
0.0
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMWP23001
21-24 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Recommended Application Schematic Circuit Diagram
Drain Supply Vd = +4 V L
1 µF L = Bond Wire Inductance
10,000pF
100pF
L
L 100pF L
L
L 100pF
L MMIC Chip RF IN
100pF L
L
RF OUT
Ground (Back of Chip) Gate Supply Vg
L
100pF
Recommended Assembly Diagram
10,000pF
Vd (Positive) 1µF
Die-Attach 80Au/20Sn 100pF 100pF 100pF 5mil Thick Alumina 50-Ohm RF Input 5 mil Thick Alumina 50-Ohm 100pF
RF Output
100pF 2 mil Gap Vg (Negative)
L< 0.015" (4 Places)
Note: Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
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