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Details, datasheet, quote on part number:RMWP26001
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| Part: | RMWP26001 |
| Category: | RF & Microwaves => Amplifiers => Power Amplifiers => MMIC |
| Description: | Circuit Description = 24-26.5 GHZ Power Amplifier Mmic ;; Frequency = 24-26.5 GHZ ;; SS Gain = 23 DB ;; Pout @ 1dB = 24 DBM |
| Company: | Raytheon RF Components |
| Datasheet: | Download RMWP26001 datasheet File size : 613 kB |
| Request For quote: | Find where to buy RMWP26001
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Datasheet text preview:
RMWP26001
24-26.5 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Description
The RMWP26001 is a 4-stage GaAs MMIC amplifier designed as a 24 to 26.5 GHz Power Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 26 GHz transmit/receive chipset. The RMWP26001 utilizes Raytheon's 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications.
Features
4 mil substrate Small-signal gain 23 dB (typ.) 1dB compressed Pout 24 dBm (typ.) Chip size 2.85 mm x 1.2 mm
Absolute Maximum Ratings
Parameter Positive DC voltage (+4V Typical) Negative DC voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance
(Channel to Backside)
Symbol Vd Vg Vdg ID P IN TC Tstg Rj c
Value +6 -2 8 531 +8 -30 to +85 -55 to +125 41.5
Unit Volts Volts Volts mA dBm °C °C °C/W
Electrical Characteristics
(At 25°C), 50 system, Vd=+4 V, Quiescent Current Idq=370 mA
Parameter Frequency Range Gate Supply Voltage1 (Vg) Gain Small Signal at Pin= -8 dBm Gain Variation vs. Frequency Gain at 1 dB Compression Power Output at 1 dB Compression Power Output Saturated: Pin=+2 dBm Drain Current at Pin=-8 dBm
Min 24
Typ -0.3
Max 26.5
Unit GHz V dB dB dB dBm dBm mA
Parameter Drain Current at 1dB Compression Drain Current at Saturated: Pin=+2 dBm Power Added Efficiency (PAE): at P1dB Input Return Loss (Pin=-8 dBm) Output Return Loss (Pin=-8 dBm) OIP3
Min
Typ 400 380 16 12 12 33
Max Unit mA mA % dB dB dBm
20
23 1 22 24
22
25 370
Notes: 1. Typical range of gate voltage is -0.7 to -0.05 V to set Idq of 370 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMWP26001
24-26.5 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typically 2 mil between the chip and the substrate material.
Figure 1 Functional Block Diagra m
Drain Supply Vd1
Drain Supply Vd2
Drain Supply Vd3
Drain Supply Vd4
MMIC Chip RF IN RF OUT
Ground (Back of Chip)
Gate Supply Vg
Figure 2 Chip Layout and Bond Pad Locations Chip Size is 2.85 mm x 1.2 mm. x 100 µm. Back of chip is RF and DC ground
Dimensions in mm
0.0 0.506 0.996 1.248 1.963 2.85
1.2
1.2
0.7815 0.627 0.4725
0.735 0.428 0.5805
0.0
0.0
0.0
0.726
2.85
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMWP26001
24-26.5 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Figure 3 Recommended Application Schematic Circuit Diagram
10,000pF Drain Supply Vd=+4 V 10 µF L = Bond Wire Inductance
L
100pF
L
100pF
L
L
100pF
L
100pF
L
L
L
L
MMIC Chip RF IN RF OUT
L Ground (Back of Chip)
100pF
Gate Supply Vg
Figure 4 Recommended Assembly Diagram1
Vd (Positive) 10µF
10,000pF
Die-Attach 80Au/20Sn 100pF
100pF 5mil Thick Alumina 50-Ohm RF Input 100pF 100pF
5 mil Thick Alumina 50-Ohm RF Output
100pF 2 mil Gap Vg (Negative)
Note: 1. Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
L< 0.015" (4 Places)
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