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Details, datasheet, quote on part number:RMPA2450-58
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Datasheet text preview:
RMPA2450-58
2.4-2.5 GHz GaAs MMIC Power Amplifier
PRODUCT INFORMATION
Description
The Raytheon RMPA2450-58 is a fully monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F for high efficiency applications. On-chip matching components allow operation in a 50-Ohm system with no external matching components. The MMIC chip design utilizes Raytheon's 0.25 µm power PHEMT process.
Features
35% Power Added Efficiency 31 dBm Output Power (P1dB) at Vd=+7V 28 dBm Output Power (P1dB) at Vd= +5V No external RF matching components Small Package Outline: 0.28" x 0.28" x 0.07" Thermal Resistance (Channel to Case): 33°C/Watt
Absolute Maximum Ratings
Parameter Positive Drain DC Voltage Negative Gate DC Voltage Simultaneous Drain to Gate Voltage RF Input Power (from 50 source) Drain to Source Current Gate Current Channel Temperature Operating Case Temperature Storage Temperature Range
Symbol Vd1,Vd2 Vg1,Vg2 Vd-Vg PIN Ids Ig Tch TCase TStg
Value +8 -5 +10 +10 575 5 150 -40 to 100 -40 to 125
Unit Volts Volts Volts dBm mA mA °C °C °C
Electrical Characteristics
(At 25°C, Zo=50 Ohms, Unless Otherwise Noted)
Parameter Frequency Range Gain 1, 2, 4 Output Power, P1dB 1,4 Assoc. Power Added Efficiency Output Power, P1dB 3 Assoc. Power Added Efficiency
Min 2400
Typ 2450 30 28 35 31 33
Max 2500
Unit MHz dB dBm % dBm %
Parameter Drain Current (Idd1+Idd2) Gate Current (Igg1+Igg2) Input Return Loss (50)
Min
Typ
Max 550 5
Unit mA mA dB
7.5
Notes: 1. Idq=360 mA, Vd1=Vd2=4.8V 2. Pin= -3 dBm, 3. Vd1=Vd2= +7V 4. Production Testing includes Gain, Output Power (P1dB) and Input Return Loss at Vd1=Vd2=4.8V, Vg1=Vg2= -0.5V (nominal) , adjusted for Idq=360 mA, Pin= -3 dBm and at F=2.45 GHz. Other Parameters are guaranteed by Design Validation Testing. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 30, 2000 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA2450-58
2.4-2.5 GHz GaAs MMIC Power Amplifier
PRODUCT INFORMATION
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE The following briefly describes a procedure for evaluating the high efficiency PHEMT amplifier packaged in a surface mount package. It may be noted that the chip is a fully monolithic amplifier for ISM band applications. Figure 1 shows the functional block diagram of the packaged product. Test Fixture Figure 1 shows the outline and pin-out descriptions for the packaged device. A typical test fixture schematic showing external bias components is shown in figure 3. Figure 4 shows typical layout of an evaluation board corresponding to the schematic diagram. The following should be noted: (1) Package pin designations are as shown in figure 2. (2) Vg1, Vg2 are the Gate Voltages (negative) applied at the pins of the package (3) Vgg1=Vgg2=Vgg is the negative supply voltage at the evaluation board terminal (4) Vd1, Vd2 are the Drain Voltages (positive) applied at the pins of the package (5) Vdd1=Vdd2=Vdd is the positive supply voltage at the evaluation board terminal
Figure 1 Package Outline and Pin Designations
Dimensions in inches
TOP VIEW 0.200 SQ. 6 54 A 7 0.030 8 9 10 11 PLASTIC LID 0.010 0.230 0.246 0.282 SIDE SECTION 12
Raytheon RMPA 2450
BOTTOM VIEW
Pin #
Description
456 3 0.015 2 1 2 1 12 11 10 9 0.041 3 7 8
1 2 3 4 5 6 7 8 9 10 11 12 13
GND RF Out GND Vd2 Vd1 GND GND RF In GND Vg1 Vg2 GND GND (PACKAGE BASE)
Figure 2 Functional Block Diagram of Packaged Product
Vd1 Pin# 5
Vd2 Pin# 4
Ground Pin# 1, 3, 6, 7, 9, 12, 13
RF IN Pin# 8
RF OUT Pin# 2
Vg1 Pin# 10
Vg2 Pin# 11
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 30, 2000 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA2450-58
2.4-2.5 GHz GaAs MMIC Power Amplifier
PRODUCT INFORMATION
Figure 3 Schematic for a Typical Test Evaluation Board (RMPA2450-58-TB) 6 RF IN J1 7
Raytheon RMPA 2450
+ C2 4 3 C4 (Opt) C6
Vdd P2
RF OUT J2 1 12
9 U1
Vgg P1 C5 + C3 (Opt) C1
GND P3
Figure 4 Layout and Assembly of Test Evaluation Board (RMPA2450-58-TB)
C4 C2 U1
P1
C6
Vdd1=Vdd2 (+Vdd) P2
RF In J1
C2
C4
U1
C1
RF Out J2
C1
C3
+
C3
P2 P3
C5 Vgg1=Vgg2 (-Vgg) P1
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 30, 2000 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
Ground (GND) P3
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