|
Details, datasheet, quote on part number:RMPA2451B-58
| |
Datasheet text preview:
RMPA2451B-58
2.4-2.5 GHz GaAs MMIC Power Amplifier
Description
PRODUCT INFORMATION
Raytheon RMPA2451B-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F for high efficiency applications. External matching components are required to optimize the RF performance. The MMIC chip design utilizes Raytheon's 0.25µm power PHEMT process.
Features
38% Power Added Efficiency 29 dBm Typical Output Power Small package outline: 0.28" x 0.28" x 0.07
Absolute Maximum Ratings
Parameter Positive Drain DC Voltage Negative Gate DC Voltage Simultaneous Drain to Gate Voltage RF Input Power (from 50 source) Drain Current, First Stage Drain Current, Second Stage Gate Current Channel Temperature Operating Case Temperature Storage Temperature Range Thermal Resistance (Channel to Case)
Symbol Vd1,Vd2 Vg1,Vg2 Vd-Vg Pin Id1 Id2 Ig Tc Tcase Tstg Rjc
Value +8 -5 +10 +10 75 525 5 175 -40 to 85 -40 to 125 33
Units Volts Volts Volts dBm mA mA mA °C °C °C °C/Watt
Electrical Characteristics1
Parameter Frequency Range Gain2 Output Power, P1dB2 Associated Power Added Efficiency
Min 2400 28.5 27
Typ 2450 33 29 38
Max 2500
Unit M Hz dB dBm %
Parameter 3rd order Intermod. Product3 Drain Current (Id1 & Id2) Gate Current (Ig1 + Ig2) Input Return Loss (50)
Min
Typ -3 5 430 -1 5
Max Unit -27 5 dBc mA mA dB
Notes: 1. Notes 4, 5. At 25°C using Raytheon Test Boards. 2. Production Testing includes Gain, Output Power at 1-dB gain compression (P1dB) and Input Return Loss at Vd1 = Vd2 = +5.0V; Vg1,Vg2 = -0.5V (nominal), adjust Vg1 and Vg2 to get Idq1 = 60 mA, Idq2 = 340 mA and at F = 2.45 GHz. 3. Two tone 3rd order Output Intermodulation products (IM3) are measured with total output power level of +25 dBm. Other Parameters are guaranteed by Design Validation Testing (DVT). Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised December 7, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA2451B-58
2.4-2.5 GHz GaAs MMIC Power Amplifier
Application Information
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. The following describes the procedure for evaluating the RMPA2451B-58, a partially-matched Pseudomorphic High Electron Mobility (PHEMT) monolithic power amplifier which has been designed for wireless applications in the 2.4 - 2.5 GHz ISM band, in a surface mount package. The package outline, along with the pin designations, is provided as Figure 1. The functional block diagram of the packaged product is provided as Figure 2. It should be noted that the RMPA2451B-58 requires the use of external passive components to form the DC bias and RF output matching circuits. The schematic for a recommended DC bias / RF matching circuit is shown in Figure 3, along with a list of the appropriate components. Figure 2 illustrates the layout of an evaluation board based on this schematic (RMPA2451B-58-TB). Figures 5 to 7 illustrate typical device performance. This data for various operating parameters was obtained across the design bandwidth over a range of temperatures. Figure 5 shows the variation in Gain and P1dB with temperature and operating frequency. Figure 6 shows the 3rd-order intermodulation product measured at different total output power levels. Figure 7 demonstrates the device performance under a Wideband Code Division Multiple Access (W-CDMA) modulation scheme, the conditions of which are specified. Dimensions in inches
TOP VIEW
0.200 SQ. 654 3 2 1 0.015 0.041
Figure 1 Package Information
BOTTOM VIEW
Pin # 1 2 3 4 5 6 7 8 9 10 11 12 BASE
Description Vd2 + RF Out Vd2 + RF Out Vd2 + RF Out GND Vd1 GND GND RF In GND Vg1 Vg2 GND GND
0.030
7 8 9
Raytheon RMPA2451B-58 PPYYWWX
PLASTIC LID
10 11 12 0.010 0.230 0.246 0.282 0.070 MAX.
SIDE SECTION
Figure 2 Functional Block Diagra m
Pin #8 RF INPUT
Pin #5 Vd1
Pins #4, #6, #7, #9, #12 Ground
Pins #1, #2, #3 RF OUTPUT & Vd2
Package Underside GROUND
Pin #10 Vg1
Pin #11 Vg2
Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised December 7, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA2451B-58
2.4-2.5 GHz GaAs MMIC Power Amplifier
Test Procedure
for the evaluation board (RMPA2451B-58-TB)
PRODUCT INFORMATION
It is important that the following points be noted prior to testing; Pin designations are as shown in Figure 2.
Vgg1 and Vgg2 are the negative Gate bias voltages applied at the pins of the evaluation test board. Vdd1 and Vdd2 are the positive Drain bias voltages applied at the pins of the evaluation test board. Vg1 and Vg2 are the negative Gate bias voltages applied at the pins of the package. Vd1 and Vd2 are the positive Drain bias voltages applied at the pins of the package.
CAUTION: LOSS OF GATE VOLTAGE (VG1, VG2) WHILE DRAIN VOLTAGES (VD1, VD2) ARE PRESENT MAY DAMAGE THE AMPLIFIER. The following sequence of procedures must be followed to properly test the amplifier: Step 1: Turn the RF power OFF. Step 2: Use the GND terminals of the evaluation board for the ground of the DC supplies. Step 3: Apply a nominal voltage of approximately -1.5V to both Vgg1 and Vgg2 terminals. Step 4: Apply a nominal voltage of +5.0V to the Vdd terminals. Adjust Vgg1 to give a first stage quiescent Drain current, Id1 of 60mA. Adjust Vgg2 to provide a second stage quiescent Drain current, Idd2, of 340 mA. Step 5: Apply an RF signal within the ISM frequency range (2.4 - 2.5 GHz) at an initial input power level of -10 dBm. Step 6: To perform intermodulation product measurements, a second RF signal generator with a frequency difference of 1 MHz is required, along with an appropriate power combiner. The test configuration should allow this additional generator to provide the same input power level as the first generator into the device. Intermodulation readings may then be made at the required total output power levels. Step 7: To operate at lower quiescent Drain currents, increase the magnitudes of Vgg1 and Vgg2 as required, alternatively to operate at higher quiescent Drain currents, the magnitudes of Vgg1 and Vgg2 should be decreased accordingly. Step 8: When turning the amplifier OFF, the powerup sequence should be reversed.
Figure 3 Schematic of a recommended DC bias/ RF matching circuit
Vd1 C2 C1 C3 L2
Raytheon RMPA2451B PPYYWWX
C3 RF Input
RF Output L1 C1 C4 Vd2
Vg1 C2 C1 C1 C2 Vg2
C2
Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised December 7, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
|
|
