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Details, datasheet, quote on part number:RMPA27000
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Datasheet text preview:
RMPA27000
27 - 29 GHz 1.8 Watt Power Amplifier MMIC
Description
ADVANCED INFORMATION
The Raytheon RMPA27000 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA27000 is a 3-stage GaAs MMIC amplifier utilizing Raytheon's advanced 0.15 µm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output.
Features
18 dB small signal gain (typ.) 32.5 dBm saturated power out (typ.) DC Bias connections on top or bottom side Circuit contains individual source vias Chip size 4.00 mm x 2.98 mm
(Photo TBS)
Absolute Maximum Ratings
Parameter Positive DC Voltage (+5 V Typical) Negative DC Voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 source) Operating Base plate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside)
Symbol Vd Vg Vdg ID P IN TC TStg Rj c
Value +6 -2 +8 2450 +22 -30 to +85 -55 to +125 5.6
Unit Volts Volts Volts mA dBm °C °C °C/W
Electrical Characteristics1
(At 25°C) 50 system, Vd=+5 V, Quiescent current (Idq) =1500 mA
Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal (Pin=0 dBm) Gain Variation vs. Frequency Power Output at 1 dB Compression Power Output Saturated: (Pin=+19 dBm)
Min 27
Typ -0.2
Max 29
Unit GHz V dB dB dBm dBm
Parameter Drain Current at Pin=0 dBm Drain Current at P1 dB Compression Power Added Efficiency (PAE): at P1dB OIP3 (24 dBm/Tone) Input Return Loss (Pin=0 dBm) Output Return Loss (Pin=0 dBm)
Min
Typ 1500 1780 20 39 6 10
Max
Unit mA mA % dBm dB dB
16
18 +/-0.5 32
32
32.5
Note: 1. Typical range of the negative gate voltage is -1.0 to 0.0V to set typical Idq of 1500 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised July 27, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA27000
27 - 29 GHz 1.8 Watt Power Amplifier MMIC
Application Information
ADVANCED INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC Ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typically 2 mils gap between the chip and the substrate material.
Gate Supply Vg MMIC Chip RF IN RF OUT
Figure 1 Functional Block Diagram of Packaged Product
Ground (Back of Chip)
Drain Supply Vd
Figure 2 Chip Layout and Bond Pad Locations (Chip Size=4.000 mm x 2.997 mm x 50 um Typical, Back of Chip is RF and DC Ground)
Dimensions in mm
2.997 2.812 2.714
1.692 1.492 1.292
0.270 0.172 0.0 3.891 4.000
1.422 0.0 0.454 2.513 Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised July 27, 2001 Page 2
Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA27000
27 - 29 GHz 1.8 Watt Power Amplifier MMIC
Figure 3 Chip Layout and Bond Pad Locations (Chip Size=4.000 mm x 2.997 mm x 50 um Typical, Back of Chip is RF and DC Ground)
MMIC Chip RF IN RF OUT 0.01 µF 100pF Gate Supply (-Vg) Bond Wire Ls
ADVANCED INFORMATION
100pF Ground (Back of Chip) 0.01 µF
100pF
100pF
Bond Wire Ls
0.01 µF
0.01 µF
Drain Supply (Vd=+5V)
Figure 4 Recommended Assembly Diagram
2 mil Gap
Die-Attach 80Au/20Sn
5mil Thick Alumina 50-Ohm RF Input
5 mil Thick Alumina 50-Ohm RF Output
100pF
100pF
100pF
100pF L< 0.015" (4 Places)
0.01µF Vg (Negative)
0.01µF
0.01µF
0.01µF Vd (Positive)
MMIC has Vg and Vd bias pads accessible on both top and bottom sides. DC bias connections are required only on one side. Note: Use 0.003" x 0.0005" gold ribbon or 1 mil gold wire for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised July 27, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
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