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Details, datasheet, quote on part number:RMPA29000
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Datasheet text preview:
RMPA29000
27-30 GHz 1 Watt Power Amplifier MMIC
Description
PRODUCT INFORMATION
The Raytheon RMPA29000 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA29000 is a 3-stage GaAs MMIC amplifier utilizing Raytheon's advanced 0.15µm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output.
Features
23 dB small signal gain (typ.) 30 dBm Pout at 1dB compression (typ.) Circuit contains individual source Vias Chip Size 5.20 mm x 2.95 mm
Absolute Maximum Ratings
Parameter Positive DC Voltage (+5 V Typical) Negative DC Voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 source) Operating Base plate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside)
Symbol Vd Vg Vdg ID PIN TC TStg Rjc
Value +6 -2 +8 1092 +18 -30 to +85 -55 to +125 20
Unit Volts Volts Volts mA dBm °C °C °C/W
Electrical Characteristics
(At 25°C) 50 system, Vd=+5 V, Quiescent current (Idq) = 700 mA
Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal (Pin=-1 dBm) Gain Variation Vs. Frequency Power Output at 1 dB Compression Power Output Saturated: (Pin=+10.5 dBm)
Min 27 18
Typ -0.4 23 +/-1 30
Max Unit 30 GHz V dB dB dBm dBm
Parameter Drain Current at Pin=0 dBm Drain Current at P1 dB Compression Power Added Efficiency (PAE): at P1dB Input Return Loss (Pin=-1 dBm) Output Return Loss (Pin=-1 dBm)
Min
Typ 700 850 25 10 10
Max Unit mA mA % dB dB
28.5
30.5
Note: 1. Typical range of the negative gate voltages is -0.9 to 0.0V to set typical Idq of 700 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised January 18, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA29000
2730 GHz 1 Watt Power Amplifier MMIC
Application Information
PRODUCT INFORMATION
CAUTION: THIS IS AN ESD SENSITIVE DEVICE Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC Ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typically 2 mils gap between the chip and the substrate material. Drain Supply (VDA & VDB)
Figure 1 Functional Block Diagra m
MMIC Chip
RF IN
RF OUT
Ground (Back of Chip)
Gate Supply (VGA & VGB)
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised January 18, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA29000
2730 GHz 1 Watt Power Amplifier MMIC
Figure 2 Chip Layout and Bond Pad Locations (Chip Size=5.210 mm x 2.946 mm x 50 µm. Back of Chip is RF and DC Ground)
PRODUCT INFORMATION
Dimensions in mm
2.946 2.672
1.651 1.461 1.285
0.254
0.0 0.122 0.236 Drain Supply (Vd= +5 V) (Connect to both VDA & VDB) 10000pF 4.445
5.210 5.072
Figure 3 Recommended Application Schematic Circuit Diagram
Bond Wire Ls
L 100pF L
MMIC Chip
RF IN
RF OUT
L Ground (Back of Chip) Bond Wire Ls 100pF L 10000pF
Gate Supply (Vg) (VGA and/or VGB)
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised January 18, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
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