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Details, datasheet, quote on part number:RMPA29200
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Datasheet text preview:
RMPA29200
29-31 GHz 2 Watt Power Amplifier MMIC
ADVANCED INFORMATION
Description
The Raytheon RMPA29200 is a high efficiency power amplifier designed for use in Sat-Com, point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA29200 is a 3-stage GaAs MMIC amplifier utilizing Raytheon's advanced 0.15µm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output.
Features
17 dB small signal gain (typ.) 33 dBm saturated power out (typ.) DC Bias connections on top or bottom side Circuit contains individual source vias Chip size 4.00 mm x 2.98 mm
Absolute Maximum Ratings
Parameter Positive DC Voltage (+5 V Typical) Negative DC Voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 source) Operating Base plate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside)
Symbol Vd Vg Vdg ID PIN TC T Stg Rjc
Typical +6 -2 +8 2450 +22 -30 to +85 -55 to +125 5.6
Units Volts Volts Volts mA dBm °C °C °C/W
Electrical Characteristics
(at 25 °C) 50 Ohm system, Vd=+5V, Quiescent current (Idq)=1500 mA
Parameter
Min
Typ -0.2 17 +/-0.5 32.5 33 1500
Max 31
Unit GHz V dB dB dBm dBm mA
Parameter Drain Current at P1 dB Compression Power Added Efficiency (PAE): at P1dB OIP3 (26 dBm/Tone) Input Return Loss (Pin=0 dBm) Output Return Loss (Pin=0 dBm)
Min
Typ 1780 20 38 12 10
Max
Unit mA % dBm dB dB
Frequency Range 29 Gate Supply Voltage (Vg)1 Gain Small Signal 14.5 (Pin=0 dBm) Gain Variation vs. Frequency Power Output at 1 dB Compression Power Output Saturated: 32 (Pin=+19 dBm) Drain Current at Pin=0 dBm
Note: 1. Typical range of the negative gate voltage is -1.0 to 0.0V to set typical Idq of 1500 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised July 27, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA29200
29-31 GHz 2 Watt Power Amplifier MMIC
ADVANCED INFORMATION
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC Ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typically 2 mils gap between the chip and the substrate material.
Figure 1 Functional Block Diagra m
MMIC Chip RF IN
Gate Supply Vg
RF OUT
Ground (Back of Chip)
Drain Supply Vd
Figure 2
Chip Layout and Bond Pad Locations (Chip Size=4.000 mm x 2.997 mm x 50 µm. Back of Chip is RF and DC Ground)
Dimensions in mm 2.997 2.812 2.714
1.692 1.492 1.292
0.270 0.172 0.0 0.0 0.454 1.422 2.513 3.891 4.000
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised July 27, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA29200
29-31 GHz 2 Watt Power Amplifier MMIC
ADVANCED INFORMATION
Figure 3
Recommended Application Schematic and Circuit Diagram Gate Supply (-Vg)
0.01µF
100pF Bond Wire Ls
MMIC Chip RF IN RF OUT
Ground (Back of Chip)
100pF
100pF
100pF Bond Wire Ls
0.01µF
0.01µF
0.01µF
Drain Supply (Vd=+5V)
Figure 4
Recommended Assembly Diagram 5mil Thick Alumina 50-Ohm
2 mil Gap
Die-Attach 80Au/20Sn 5 mil Thick Alumina 50-Ohm
RF Input
RF Output
L< 0.015" (4 Places)
100pF
100pF
100pF
100pF
MMIC has Vg and Vd bias pads accessible on both top and bottom sides. DC bias connections are required only on one side.
0.01µF
0.01µF Vg (Negative)
0.01µF
0.01µF Vd (Positive)
Note: Use 0.003" x 0.0005" gold ribbon or 1 mil gold wire for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised July 27, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
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