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Details, datasheet, quote on part number:RMPA39200
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Datasheet text preview:
RMPA39200
37-40 GHz 1.6 Watt Power Amplifier MMIC
PRODUCT INFORMATION
Description
The Raytheon RMPA39200 is a high efficiency power amplifier designed for use in point to point radio, point to multi-point communications, LMDS and other millimeter wave applications. The RMPA39200 is a 3-stage GaAs MMIC amplifier utilizing Raytheon's advanced 0.15µm gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output.
Features
19 dB small signal gain (typ.) 32 dBm power out (typ.) Circuit contains individual source vias Chip Size 4.28 mm x 3.19 mm
Absolute Maximum Ratings
Parameter Positive DC Voltage (+5 V Typical) Negative DC Voltage Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 source) Operating Base plate Temperature Storage Temperature Range Thermal Resistance (Channel to Backside)
Symbol Vd Vg Vdg Id Pin Tc Tstg Rj c
Value +6 -2 +8 2352 20 -30 to +85 -55 to +125 8
Unit Volts Volts Volts mA dBm °C °C °C/W
(At 25°C) 50 system, Vd=+5 V, Quiescent current (Idq) = 1600 mA
Electrical Characteristics
Parameter Frequency Range Gate Supply Voltage (Vg)1 Gain Small Signal (f=37-38.5 GHz) (f=38.5-40 GHz) (Pin=0 dBm) Gain Variation vs. Frequency Power Output at 1 dB Compression (f=37-38.5 GHz) (f=38.5-40 GHz) Power Output Saturated: (f=37-38.5 GHz) (f=38.5-40 GHz) (Pin=+16 dBm)
Min 37
Typ -0.2
Max 40
Unit GHz V dB dB
Parameter Drain Current at Pin=0 dBm Drain Current at P1 dB Compression Power Added Efficiency (PAE) at P1dB OIP3 (17 dBm/Tone) (10 MHz Tone Sep.) Input Return Loss (Pin=0 dBm) Output Return Loss (Pin=0 dBm)
Min
Typ 1600 1700 17 37 10 10
Max
Unit mA mA % dBm dB dB
17 16
19 17
+/-1.5
dB
31 30 31 30 32 31
dBm dBm dBm dBm
Note: 1. Typical range of the negative gate voltages is -0.5 to 0.0V to set typical Idq of 1600 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 25, 2002 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA39200
37-40 GHz 1.6 Watt Power Amplifier MMIC
PRODUCT INFORMATION
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment for power devices should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC Ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist-grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typical 2 mil gap between the chip and the substrate material.
Drain Supply (VDA & VDB) MMIC Chip
Figure 1 Functional Block Diagra m
RF IN
RF OUT
Ground (Back of Chip)
Gate Supply (VGA & VGB) 3.194 3.010
Figure 2 Chip Layout and Bond Pad Locations (Chip Size=4.282 mm x 3.194 mm x 50 um. Back of Chip is RF and DC Ground)
Dimensions in mm
1.827 1.597 1.367
0.184 0.0 0.0 0.205 0.889 1.954 2.426 2.954 3.500 4.282
Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 25, 2002 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMPA39200
37-40 GHz 1.6 Watt Power Amplifier MMIC
PRODUCT INFORMATION
Figure 3 Recommended Application Schematic Circuit Diagram
Bond Wire L's L MMIC Chip RF IN RF OUT 10,000 pF L 100 pF Drain Supply (Vd= +5V) (Connect to both VDA & VDB)
Ground (Back of Chip)
100 pF
L Bond Wire L's L
Gate Supply (Vg) (VGA and/or VGB)
10,000 pF Vd (Positive) Die-Attach 80Au/20Sn
Figure 4 Recommended Assembly and Bonding Diagram
Vg (Negative) 2 mil Gap
10,000 pF
10,000 pF
100 pF
100 pF
5mil Thick Alumina 50-Ohm
5 mil Thick Alumina 50-Ohm
RF Input
RF Output
L< 0.015" (4 Plcs)
100 pF 10,000 pF Vg (Negative)
100 pF Vd (Positive) 10,000 pF
Note: Use 0.003" x 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. Vd should be biased from 1 supply on both sides as shown.Vg can be biased from either or both sides from 1 supply. Characteristic performance data and specifications are subject to change without notice. www.raytheonrf.com Revised January 25, 2002 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
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