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Details, datasheet, quote on part number:RMWP38001
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RMWP38001
37-40 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Description
The RMWP38001 is a 4-stage GaAs MMIC amplifier designed as a 37 to 40 GHz Power Amplifier for use in point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 38 GHz transmit/receive chipset. The RMWP38001 utilizes Raytheon's 0.25µm power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications.
Features
4 mil substrate Small-signal gain 22 dB (typ.) 1dB compressed Pout 22 dBm (typ.) Chip size 3.4 mm x 1.4 mm
Absolute Maximum Ratings
Parameter Positive DC voltage (+4V Typical) Simultaneous (Vd - Vg) Positive DC Current RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range Thermal Resistance
(Channel to Backside)
Symbol Vd Vdg ID P IN TC Tstg Rj c
Value +6 8 483 +8 -30 to +85 -55 to +125 46
Unit Volts Volts mA dBm °C °C °C/W
Electrical Characteristics
(At 25°C), 50 system, Vd=+4 V, Quiescent Current Idq=250 mA
Parameter Frequency Range Gate Supply Voltage1 (Vg) Gain Small Signal at Pin= -10 dBm Gain Variation vs Frequency Gain at 1 dB Compression Power Output at 1 dB Compression Power Output Saturated: Pin=+5 dBm Drain Current at Pin=-10 dBm Drain Current at 1dB Compression
Min 37
Typ -0.5
Max 40
Unit GHz V dB dB dB dBm dBm mA mA
Parameter Drain Current at Saturated: Pin=+5 dBm Power Added Efficiency (PAE): at P1dB Input Return Loss (Pin=-10 dBm) Output Return Loss (Pin=-10 dBm) OIP3 Noise Figure Detector Voltage (Pout= +15 dBm) (Bias Current = 0.02-0.05 mA)
Min
Typ 270 15 12 7 30 6 0.15
Max
Unit mA % dB dB dBm dB V
18
22 4 21 22
21
23.5 250 280
Note: 1. Typical range of gate voltage is -2.0 to 0 V to set Idq of 250 mA. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMWP38001
37-40 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF and DC ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typically 2 mil between the chip and the substrate material.
Figure 1 Functional Block Diagra m
Drain Supply Vd1 MMIC Chip RF IN
Drain Supply Vd2
Drain Supply Vd3
Drain Supply Vd4
Reference Detector Voltage Vref (not connected to circuit)
RF OUT
Ground (Back of Chip)
Gate Supply Vg
Output Power Detector Voltage Vdet
Note: For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used to measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.
Figure 2 Chip Layout and Bond Pad Locations Chip Size is 3.4 mm x 1.4 mm. Back of chip is RF and DC ground
Dimensions in mm
0.0 1.4 0.545 1.05 1.55 3.0375 3.4 1.4
0.8355 0.686 0.5365
0.8315 0.682 0.5325
0.0 0.0 0.376 3.4
0.0
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMWP38001
37-40 GHz Power Amplifier MMIC
PRODUCT INFORMATION
Figure 3 Recommended Application Schematic Circuit Diagram
10,000pF 100pF L L 100pF Drain Supply Vd=+4 V L 10,000pF L L 100pF L Reference Detector Voltage Vref RF OUT Detector Voltage Vdet L Ground (Back of Chip) L Gate Supply Vg 100pF 100pF R = 50 k Ohms L L L = Bond Wire Inductance
L
Reference Detector Bias Voltage Vrefbias (typ. -2.5 V)
MMIC Chip RF IN
R = 50kOhms Detector Bias Voltage VdetBias (typ. -2.5 V)
Note: For output power level detection, bias both detector and reference diodes. DC voltage difference between detector and reference can be used to measure output power after calibration. If output power level detection is not desired, do not make connection to detector bond pad.
Figure 4 Recommended Assembly Diagram
Die-Attach 80Au/20Sn 100pF 5mil Thick Alumina 50-Ohm RF Input
Vd (Positive) 10,000pF 10,000pF
Reference Detector Bias Voltage Vrefbias 50 K Ohms Reference Detector Voltage Vref
100pF 100pF 100pF 5 mil Thick Alumina 50-Ohm RF Output
2 mil Gap
Vg (Negative)
Notes: 1. Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief. 2. If output power level detection is not desired, do not make connection to detector bond pad. Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 14, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
Detector Voltage 50 K Ohms Vdet Detector Bias Voltage Vdetbias
L< 0.015" (2 Places)
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