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Details, datasheet, quote on part number:RMWW12001
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Datasheet text preview:
RMWW12001
12-24 GHz Doubler MMIC
PRODUCT INFORMATION
Description
The RMWW12001 is a 12 to 24 GHz Doubler designed to be used in the LO chain of point to point radios, point to multi-point communications, LMDS, and other millimeter wave applications. In conjunction with other Raytheon amplifiers, multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWW12001 utilizes Raytheon's 0.25 µm power PHEMT process and is sufficiently versatile to serve in a variety of multiplier applications. u u u u 4 mil substrate Conversion loss 10 dB (typ.) No DC bias required Chip size 1.5 mm x 2.5 mm
Features
Absolute Maximum Ratings
Parameter RF Input Power (from 50 source) Operating Baseplate Temperature Storage Temperature Range
Symbol PIN TC Tstg
Value +22 -30 to +85 -55 to +125
U nits dBm °C °C
Electrical Characteristics
(At 25ºC), 50 system, Pin=+18 dBm
Parameter Input Frequency Range Output Frequency Range Input Drive Power Conversion Loss Conversion Loss Variation vs. Frequency
Min 8.5 17 +16
Typ
Max Unit 12 24 GHz GHz dBm 12.5 dB dB
Parameter Fundamental Rejection 3rd Harmonic Rejection 4th Harmonic Rejection 5th Harmonic Rejection Input Return Loss (Pin = +18 dBm)
Min
Typ -20 -25 -25 -35 12
Max Unit dBc dBc dBc dBc dB
+18 10 2
Application Information
CAUTION: THIS IS AN ESD SENSITIVE DEVICE. Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper tungsten. The chip carrier should be machined, finished flat, plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes. Die attachment should utilize Gold/Tin (80/20) eutectic alloy solder and should avoid hydrogen environment for PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground. These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device. Recommended wire bonding uses 3 mils wide and 0.5 mil thick gold ribbon with lengths as short as practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typically 2 mil between the chip and the substrate material. The following sequence of steps must be followed to properly test the amplifier: Step 1: The RMWW12001 does not require DC bias. Apply RF input signal at the appropriate frequency band and input drive level. Step 2: Follow turn-off sequence of: Turn off RF input power.
Recommended Procedure for Operation
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 2, 2001 Page 1 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMWW12001
12-24 GHz Doubler MMIC
PRODUCT INFORMATION Figure 1 Functional Block Diagram
MMIC Chip
RF IN
X2
RF OUT
Ground (Back of Chip)
Figure 2 Chip Layout and Bond Pad Locations Chip Size is 1.5 mm x 2.5 mm 100 µm. Back of chip is RF ground
Dimensions in mm
2.5 2.345 2.2025
0.0
1.5
2.5
1.7165 1.56 1.4035
0.0
0.0
0.0
1.5
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 2, 2001 Page 2 Raytheon RF Components 362 Lowell Street Andover, MA 01810
RMWW12001
12-24 GHz Doubler MMIC
PRODUCT INFORMATION Figure 3 Recommended Assembly Diagram
Die-Attach 80Au/20Sn
5mil Thick Alumina 50-Ohm
RF Input
5 mil Thick Alumina 50-Ohm
RF Output
2 mil Gap
L< 0.015" (4 Places)
Note: Use 0.003" by 0.0005" Gold Ribbon for bonding. RF input and output bonds should be less than 0.015" long with stress relief.
Performance Data
15.00 14.00 13.00 Conversion Loss (dB) 12.00 11.00 10.00 9.00 8.00 7.00 6.00 5.00 8 9
Typical performance, Chip Bonded into 50 ohm Test Fixture
Pin=+16dBm Pin=+18dBm Pin=+20dBm
10
11
12
13
Input Frequency (GHz)
Characteristic performance data and specifications are subject to change without notice. www.raytheon.com/micro Revised March 2, 2001 Page 3 Raytheon RF Components 362 Lowell Street Andover, MA 01810
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