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Details, datasheet, quote on part number:1F1-B
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Datasheet text preview:
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1F1 THRU 1F7
FAST RECOVERY RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
FEATURES
* * * * * * F a s t switching L o w leakage L o w forward voltage drop H i g h current capability H i g h currenf surge H i g h reliability
R-1
MECHANICAL DATA
* * * * * C a s e : Molded plastic E p o x y : Device has UL flammability classification 94V-O L e a d : MIL-STD-202E method 208C guaranteed M o u n t i n g position: Any W e i g h t : 0.19 gram
.787 (20.0) MIN. .025 (0.65) DIA. .021 (0.55)
.126 (3.2) .106 (2.7)
.102 (2.6) DIA. .091 (2.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R a t i n g s at 25 o C ambient temperature unless otherwise specified. S i n g l e phase, half wave, 60 Hz, resistive or inductive load. F o r capacitive load, derate current by 20%.
.787 (20.0) MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) R AT I N G S M a x i m u m Recurrent Peak Reverse Voltage M a x i m u m RMS Voltage M a x i m u m DC Blocking Voltage M a x i m u m Average Forward Rectified Current a t TA = 25 oC P e a k Forward Surge Current 8.3 ms single half sine-wave s u p e r i m p o s e d on rated load (JEDEC method) T y p i c a l Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VR R M VRMS V DC IO I FSM CJ T J , TSTG 1F1 50 35 50 1F2 100 70 100 1F3 200 140 200 1F4 400 280 400 1.0 25 15 -55 to + 150 1F5 600 420 600 1F6 800 560 800 1F7 1000 700 1000 UNITS Volts Volts Volts Amps Amps pF
0
C
E L E C T R I C A L CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS M a x i m u m Instantaneous Forward Voltage at 1.0A DC M a x i m u m DC Reverse Current a t Rated DC Blocking Voltage TA = 25 oC M a x i m u m Full Load Reverse Current Full Cycle Average, . 3 7 5 " (9.5mm) lead length at TL = 55 oC M a x i m u m Reverse Recovery Time (Note 1) N O T E S : 1. Reverse Recovery Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts SYMBOL VF 1F1 1F2 1F3 1F4 1.3 5.0 IR 100 trr 150 250 500 uAmps nSec 2002-11 1F5 1F6 1F7 UNITS Volts uAmps
RATING AND CHARACTERISTIC CURVES ( 1F1 THRU 1F7 )
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT, (A)
FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
1.0 .8 .6 .4 .2 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE, ( ) FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 175
Single Phase Half Wave 60Hz Resistive or Inductive Load
200
8.3ms Single Half Sine-Wave (JEDED Method)
100
50 30 20 10
1
5 10 50 NUMBER OF CYCLES AT 60Hz
100
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
INSTANTANEOUS FORWARD CURRENT, (A)
20 10 3.0 1.0 0.3 0.1 .03 .01 0.4 0.6 0.8 1.0
Pulse Width=300uS 1% Duty Cycle TJ = 25
10 6 4 2 1.0 .6 .4 .2 .1 .06 .04 .02 .01 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
TJ = 25 TJ = 50
1.2
1.4
1.6
1.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V )
TJ = 25
50 NONINDUCTIVE
FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
10 NONINDUCTIVE
trr +0.5A (-) 0 PULSE
GENERATOR
(+) 25 Vdc (approx) (-)
D.U.T
-0.25A
(NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+) -1.0A
1 NOTES: Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. 2. Rise Time = 10ns max. Souce Impedance = 50 ohms.
1cm
SET TIME BASE FOR 50/100 ns/cm
RECTRON
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