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Details, datasheet, quote on part number:1N4448B
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Datasheet text preview:
R E C TR O N S E M IC O N D U C T O R
TECHNICAL SPECIFICATION
1N4448
1N4448 SIGNAL DIODE
Absolute Maximum Ratings (Ta=25°C) Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW/°C (25°C) Forward Current IF 500 mA Junction Temp. Tj -65 to 175 °C Storage Temp. Tstg -65 to 175 °C Mechanical Data
Items Package Case Lead/Finish Chip Materials DO-35 Hermetically sealed glass Double stud/Solder Plating Glass Passivated
26 MIN Dimensions in millimeters
Dimensions (DO-35)
DO-35
26 MIN 0.457 DIA. 0.559
4.2 max. 2.0 DIA. max.
Electrical Characteristics (Ta=25°C) Ratings Minimum Breakdown Voltage IR= 5.0uA IR= 100uA Peak Forward Surge Current PW= 1sec. Maximum Forward Voltage IF= 100mA Maximum Reverse Current VR= 20V VR= 75V VR= 20V, Tj= 150°C Maximum Junction Capacitance VR= 0, f= 1 MHz Maximum Reverse Recovery Time IF= 10mA, VR= 6V, IRR= 1mA, RL= 100
Symbol BV
Ratings 75 100 1.0 1.0
Unit V
IFsurge VF IR
A V uA
0.025 5.0 50 Cj 4 trr 4 ns pF
RECTRON USA
1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com
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