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Part: 1S50-B
Category:
Discrete
-> Diodes & Rectifiers
-> Schottky Diodes
Description: 1.0A,50V,SCHOTTKY,R-1
Company: Rectron
Datasheet: Download 1S50-B datasheet File size : 413 kB
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Datasheet text preview:
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1S20 THRU 1S60
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 20 to 60 Volts CURRENT 1.0 Ampere
FEATURES
* * * * * * * Low power loss, high efficiency Low leakage Low forward voltage High current capability High speed switching High surge capabitity High reliability
R-1
MECHANICAL DATA
* * * * * C a s e : Molded plastic E p o x y : Device has UL flammability classification 94V-O L e a d : MIL-STD-202E method 208C guaranteed M o u n t i n g position: Any W e i g h t : 0.12 gram
.787 (20.0) MIN. .025 (0.65) DIA. .021 (0.55)
.126 (3.2) .106 (2.7)
.102 (2.6) DIA. .091 (2.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R a t i n g s at 25 o C ambient temperature unless otherwise specified. S i n g l e phase, half wave, 60 Hz, resistive or inductive load. F o r capacitive load, derate current by 20%.
.787 (20.0) MIN.
D i m e n s i o n s in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) R AT I N G S M a x i m u m Recurrent Peak Reverse Voltage M a x i m u m RMS Voltage M a x i m u m DC Blocking Voltage M a x i m u m Average Forward Rectified Current .375" (9.5mm) lead length P e a k Forward Surge Current 8.3 ms single half sine-wave s u p e r i m p o s e d on rated load (JEDEC method) T y p i c a l Thermal Resistance (Note 1) T y p i c a l Junction Capacitance (Note 2) Operating Temperature Range Storage Temperature Range SYMBOL VR R M VRMS V DC IO IFSM RJA CJ TJ TSTG 1S20 20 14 20 1S30 30 21 30 1S40 40 28 40 1.0 20 50 110 -55 to + 150 -55 to + 150 1S50 50 35 50 1S60 60 42 60 UNITS Volts Volts Volts Amps Amps
0
C/ W pF
0 0
C C
E L E C T R I C A L CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS M a x i m u m Instantaneous Forward Voltage at 1.0A DC M a x i m u m Average Reverse Current at Rated DC Blocking Voltage @ T A = 25 o C @ T A = 100 o C SYMBOL VF IR 1S20 1S30 .55 1.0 10 1S40 1S50 .70 1S60 UNITS Volts mAmps mAmps 2002-10
N O T E S : 1. Thermal Resistance (Junction to Ambient): Vertical PC Board Mounting, 0.5" (12.7mm) Lead Length. 2. Measured at 1 MHz and applied reverse voltage of 4.0 volts.
RATING AND CHARACTERISTIC CURVES ( 1S20 THRU 1S60 )
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
AVREAGE FORWARD CURRENT, (A)
1.0
INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 2 - TYPICAL INSTANTANEOUS FORWARD CHARCTERISTICS
20 10
.75
1S 50 1S 20 S ~1
.50
Single Half Wave 60HZ Resistive or Inductive Load 0.375" (9.5mm) Lead Length
1.0
.25
1S20 1S30 1S40 1S50 1S60 TJ = 25 Pulse Width = 300uS 1% Duty Cycle
S ~1 40
60
0 0 25 50 75 100 125 LEAD TEMPERATURE, ( 150 ) 175
.1 .1 .3 .5 .7 .9 1.1 1.3 1.5 1.7 1.9 2.1 INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
FIG. 3A - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT (mA)
1S20~1S40 TJ = 125
INSTANTANEOUS REVERSE CURRENT (mA)
100
100
1S50~1S60
10
10
1.0
TJ = 75
1.0
TJ = 150
TJ = 125
0.1
0.1
TJ = 75
.01
TJ = 25
.01
TJ = 25
.001 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
.001 0
20
40
60
80
100 120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
JUNCTION CAPACITANCE, (pF)
FIG. 4 - TYPICAL JUNCTION CAPACITANCE 400 200 100 80 60 40 20 10 .1 .4 1.0 4 10 REVERSE VOLTAGE, (V) 40 80
TJ = 25
PEAK FORWARD SURGE CURRENT, (A)
25 20
8.3ms Single Half Sine-Wave
15 10 5 0 1
JEDEC Method
2 4 6 8 10 20 40 80 100 NUMBER OF CYCLES AT 60Hz
RECTRON
Others parts begin by 1s
1S-1 1S-2 1S-3 1S-4 1S-5 1S-6 1S-7 1S-8 1S-9 1S-10
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