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Part: BC846A-T
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> NPN
Description: NPN,SOT23,LOW NOISE,65V,0.1A
Company: Rectron
Datasheet: Download BC846A-T datasheet File size : 63 kB
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Datasheet text preview:
TECHNICAL SPECIFICATION
BC846 A-B
Silicon Planar Epitaxial NPN Transistor
Dimensions SOT-23
1 2 3
BASE EMITTER CO LLECTO R
Absolute Maximun Ratings (Ta=25oC)
(at Ta = 25°C unless otherwise specified)
S ymbol Collec tor-Base Voltage (open emitter) Collec tor-Emmiter Voltage (VBE = 0) Collec tor-Emmitor Voltage (open base) Emit t er Base Voltage Collec tor current (d.c.) Collec tor current - Peak Bas e Current - Peak Emitter Current - Peak Total Power Dissapation Ta = 25 °C Storage Temperature Junc tion Temperature THERMAL RESISTANCE Junc tion to ambient Rt h(j-a) V C BO V C ES V C EO V EBO IC IC M IBM -IE M Pt ot Tj Ts tg
max max max max max max
Ratings 80 80 65 6 100 200 200 200 250 -55 to +150 150
Unit V V V V mA V mA mA mW °C °C
-
500
K/W
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Characteristics
Tj = 25°C unless otherwise specified
S ymbol Collec tor Cut off Current ICBO
Tes t Conditions IE = 0, VC B = 30V IE = 0, VC B = 30V, TJ = 150°C IC = 2mA, VC E = 5V . IC = 10mA, VC E = 5V IC = 10mA, IB = 0.5mA typ <
Ratings 15 5 660 580 to 700 770 90 250 700 200 600 900 2.5 100 2 10 x 110 450 90 110 180 220 150 200 290 450 125 900
Unit nA µA mV mV mV mV mV mV mV mV mV pF MHz dB dB
Bas e Emitter on Voltage
V BE VC E (SAT)
Saturation Voltage
-
VBE (SAT) VC E (SAT) Saturation Voltage
-
IC = 100mA, IB = 5mA IE = Ie = 0, V CB = 10V, f = 1MHz IC = 10mA, VC E = 5V, f =100MHz IC =200µA , VC E = 5V, RS =2k , f = 1kHz, B = 200Hz IC = 10µA, VC E = 5V IC = 2mA, VC E = 5V " " IC = 10µA, VC E = 5V IC = 2mA, VC E = 5V " " " " IC = 10µA, VC E = 5V IC = 2mA, VC E = 5V " " " " IC = 2mA, VC E = 5V, f =1kHz
VBE (SAT) Collec tor Capacitance Trans ition Frequency CC fT
Noise Figure
F
DC Current Gain BC846
hF E
> typ typ <
DC Current Gain BC846A
hF E
DC Current Gain BC846B
hF E
Small Signal Current Gain
hf e
Thermal Characteristics
Thermal Resistance From junction to ambient Rth j-a = 500 K/ W
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