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Part: BC857
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
Description: PNP,SOT-23,50V,0.1A
Company: Rectron
Datasheet: Download BC857 datasheet File size : 66 kB
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Datasheet text preview:
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RECTRON
BC857
Silicon Planar Epitaxial PNP Transistor
Absolute Maximun Ratings (Ta=25oC)
Symbol Collector- emmiter voltage (VBE = 1V) - VCEX Collector- emmitor voltage (open base) Collector current (peak value) Total Power Dissipation Junction Temperature Small- signal current gain - Ic = 2mA; - VCE = 5V; f = 1kHz Transistion frequency at f = 100MHz - IC = 10mA; - VCE = 5V Noise figure at RS = 2kohms - IC = 200uA; - VCE = 5V f = 1 kHz; B = 200Hz - VCEO - ICM P tot Tj h fe fT F max. max. max. Ratings Unit 50 45 200 250 150 75 to 900 100 MHz min 10 db V V mA mW °C
Dimensions SOT-23
1 2 3 BASE EMITTER COLLECTO R
Characteristics Ratings
(at Ta = 25°C unless otherwise specified)
Symbol - VCBO - VCEX - VCEO - VEBO - IC - ICM IEM - IBM PTOT TSTG TJ max. max. max. max. max. max. max. max. max. max. max.
Ratings 50 50 45 5 100 200 200 200 250 - 55 to +150 150
Unit V V V V mA mA mA mA mW °C °C
Collector- base voltage (open emitter) Collector- emitter voltage (+VBE =1V) Collector- emitter voltage (open base) Emitter- base voltage (open collector) Collector current (d.c) Collector current (peak value) Emitter current (peak value) Base current (peak value) Total power dissipation up to TAMB: 60 °C Storage temperature Junction temperature
RATINGS AND CHARACTERISTICS TABLE for BC857 Characteristics
Tj = 25°C unless otherwise specified
C ollector cut-off current IE = 0; -VCB = 30V; Tj = 25°C IE = 0; -VCB = 30V; Tj = 150°C Base-emi tter voltage
Symbol -ICBO -ICBO -VBE -VBE typ. < < typ. < typ. < typ. typ. < typ.
Rati ngs 1 15 4 650 600 to 750 820 75 300 700 250 650 850
Uni t nA nA µA mV mV mV mV mV mV mV mV mV
Saturati on voltages : -IC = 10mA; -IB= 0.5mA -IC = 100mA; -IB = 5mA
-VCEsat -VBEsat -VCEsat -VBEsat
Knee voltage -IC = 10mA; -IB = value for whi ch -IC = 11mA at -VCE = 1V C ollector capaci tance at f =1MHz IE = Ie = 0; -VCB = 10V Transi ti on frequency at f =100MHz -IC = 10mA; -VCE = 5V Small si gnal current gai n at f =1kHz Noi se fi gure at RS = 2k W -IC = 200uA; -VCE = 5V f = 1kHz; B = 200Hz D .C . current gai n -IC = 2mA; -VCE = 5V B C 857
-VCEK
typ. < typ.
250 600 4.5
mV mV pF
CC fT hFE F
>
100 125 to 800
MHz
typ. <
2 10 125 to 800
dB dB
hFE
Thermal Characteristics
Tj=PX (Rth t-s + Rth s-a )+ Tamb Thermal resistance From junction to tab From tab to soldering points From soldering points to ambient Symbol Rth j-t Rth t-s Rth s-a = = = Ratings 60 280 90 Unit K /W K /W K /W
RECTRON
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