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Part: EBD105S
Category:
Description:
Company: Rectron
Datasheet: Download EBD105S datasheet File size : 56 kB
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Datasheet text preview:
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
EDB101S THRU EDB106S
GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere
FEATURES
* * * * * * * Surge overloading rating - 50 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body M o u n t i n g position: Any W e i g h t : 1.0 gram
DB-S
.310 (7.9) .290 (7.4) .255 (6.5) .245 (6.2)
MECHANICAL DATA
* Epoxy : Device has UL flammability classification 94V-0
.042 (1.1) .038 (1.0)
.013 (.330) .003 (.076) .410 (10.4) .360 (9.4)
.009 (9.4)
.060 (1.524) .040 (1.016)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R a t i n g s at 25 C ambient temperature unless otherwise specified. S i n g l e phase, half wave, 60 Hz, resistive or inductive load. F o r capacitive load, derate current by 20%.
o
.335 (8.51) .320 (8.13) .135 (3.4) .115 (2.9) .205 (5.2) .195 (5.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) R AT I N G S M a x i m u m Recurrent Peak Reverse Voltage M a x i m u m RMS Volts M a x i m u m DC Blocking Voltage M a x i m u m Average Forward Current a t TA = 55 oC P e a k Forward Surge Current IFM (surge): 8.3 ms single half s i n e - w a v e superimposed on rated load (JEDEC method) T y p i c a l Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VR R M VRMS V DC IO I FSM CJ T J , TSTG 15 -65 to + 150 EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S 50 35 50 100 70 100 150 105 150 1.0 30 10 200 140 200 300 210 300 400 280 400 UNITS Volts Volts Volts Amps Amps pF
0
C
E L E C T R I C A L CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS M a x i m u m Forward Voltage at 1.0A DC M a x i m u m DC Reverse Current at Rated DC Blocking Voltage M a x i m u m Reverse Recovery Time (Note 1) N O T E S : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. @ T A = 25 oC @ T A =150 o C SYMBOL VF IR trr EDB101S EDB102S EDB103S EDB104S EDB105S EDB106S 1.0 1.25 5.0 uAmps 50 50 nSec 2001-4 UNITS Volts
RATING AND CHARACTERISTIC CURVES ( EDB101S THRU EDB106S )
AVERAGE FORWARD CURENT, (A)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 NONINDUCTIVE 10 NONINDUCTIVE
FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE
2.0
Single Phase Half Wave 60Hz Resistive or Inductive Load
trr +0.5A
(-) PULSE GENERATOR (NOTE 2)
(+) 25 Vdc (approx) (-)
D.U.T
0 -0.25A
1.0
1 NONINDUCTIVE
OSCILLOSCOPE (NOTE 1)
(+)
-1.0A
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22 pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms.
0 0 25 50 75 100 125 150 175
1cm
SET TIME BASE FOR 10 ns/cm
AMBIENT TEMPERATURE (
)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
100
10
TJ = 150
10
TJ = 100
1.0
4S
B10
B1 ED B1 05 S~ ED
06
S
ED
B10
1S~
1.0
.1
ED
TJ = 25
.1
TJ = 25
.01
Pulse Width = 300uS 1% Duty Cycle
.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
JUNCTION CAPACITANCE, (pF) PEAK FORWARD SURGE CURRENT, (A)
.001 0 .2 .4 .6 .8 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE 200 100 60 40 20 10 6 4 2 1 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) 100
TJ = 25
35 30 25 20 15 10 5 0
8.3ms Single Half Sine-Wave (JEDED Method)
RECTRON
Mounting Pad Layout
0.404 MAX. (10.26 MAX.)
0.205 (5.2) 0.195 (5.0)
0.047 MIN. (1.20 MIN.) 0.060 MIN. (1.52 MIN.)
D i m e n s i o n s in inches and (millimeters)
RECTRON
Others parts begin by eb
EB-1 EB-2 EB-3 EB-4 EB-5
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