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Part: EBD106
Category:
Description:
Company: Rectron
Datasheet: Download EBD106 datasheet File size : 56 kB
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Datasheet text preview:
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
EDB101 THRU EDB106
GLASS PASSIVATED SUPER FAST SILICON SURFACE MOUNT BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 1.0 Ampere
FEATURES
* * * * * * * * Good for automatic insertion Surge overloading rating - 50 amperes peak Ideal for printed circuit board Reliable low cost construction utilizing molded Glass passivated device Polarity symbols molded on body M o u n t i n g position: Any W e i g h t : 1.0 gram
DB-1
MECHANICAL DATA
* UL listed the recognized component directory, file #94233 * Epoxy: Device has UL flammability classification 94V-O
.255 (6.5) .245 (6.2) .350 (8.9) .300 (7.6)
.335 (8.51) .320 (8.12) .135 (3.4) .115 (2.9) .165 (4.2) .155 (3.9) .060 (1.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R a t i n g s at 25 o C ambient temperature unless otherwise specified. S i n g l e phase, half wave, 60 Hz, resistive or inductive load. F o r capacitive load, derate current by 20%.
.020 (0.5) .205 (5.2) .195 (5.0)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) R AT I N G S M a x i m u m Recurrent Peak Reverse Voltage M a x i m u m RMS Volts M a x i m u m DC Blocking Voltage M a x i m u m Average Forward Current a t TA = 55 oC P e a k Forward Surge Current IFM (surge):8.3 ms single half s i n e - w a v e superimposed on rated load (JEDEC method) T y p i c a l Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VR R M VRMS V DC IO I FSM CJ T J , TSTG 15 -65 to + 150 EDB101 50 35 50 EDB102 100 70 100 EDB103 150 105 150 1.0 30 10 EDB104 200 140 200 EDB105 300 210 300 EDB106 400 280 400 UNITS Volts Volts Volts Amps Amps pF
0
C
E L E C T R I C A L CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS M a x i m u m Forward Voltage at 1.0A DC M a x i m u m DC Reverse Current at Rated DC Blocking Voltage M a x i m u m Reverse Recovery Time (Note 1) N O T E S : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. @ T A = 25 o C @ T A =150 o C SYMBOL VF IR trr EDB101 EDB102 EDB103 1.0 EDB104 EDB105 EDB106 1.25 UNITS Volts uAmps 50 50 nSec 2001-5
5.0
RATING AND CHARACTERISTIC CURVES ( EDB101 THRU EDB106 )
AVERAGE FORWARD CURENT, (A)
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 NONINDUCTIVE 10 NONINDUCTIVE
FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 2.0
Single Phase Half Wave 60Hz Resistive or Inductive Load
trr +0.5A
(-) PULSE
GENERATOR
(+) 25 Vdc (approx) (-)
D.U.T
0 -0.25A
1.0
(NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+)
-1.0A
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms.
0 0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE ( )
1cm
SET TIME BASE FOR 10 ns/cm
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA) INSTANTANEOUS FORWARD CURRENT, (A)
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 10
100
TJ = 150
10
TJ = 100
1.0
F14
TJ = 25
15~ SF 16
SF1
1~S
1.0
.1
.1
TJ = 25
.01
.01 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
.001 0 .2 .4 .6 .8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, (V) FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
35 30 25 20 15 10 5 0 1 2 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100
8.3ms Single Half Sine-Wave (JEDEC Method)
200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 REVERSE VOLTAGE, ( V ) 100
TJ = 25
EDB10 1~EDB 104
SF
Pulse Width = 300uS 1% Duty Cycle
EDB105
~EDB10
6
RECTRON
Others parts begin by eb
EB-1 EB-2 EB-3 EB-4 EB-5
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