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Details, datasheet, quote on part number:P4FMAJ43A
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Datasheet text preview:
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
TVS P4FMAJ SERIES
GPP TRANSIENT VOLTAGE SUPPRESSOR
400 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
* * * * * * Plastic package has underwriters laboratory Glass passivated chip construction 400 watt surage capability at 1ms Excellent clamping capability Low zener impedance Fast response time
DO-214AC
R a t i n g s at 25 o C ambient temperature unless otherwise specified.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R a t i n g s at 25 o C ambient temperature unless otherwise specified.
D i m e n s i o n s in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types P4FMAJ6.8 thru P4FMAJ400 E l e c t r i c a l characteristics apply in both direction
MAXIMUM RATINGS (At TA = 25oC unless otherwise noted) R AT I N G S P e a k Power Dissipation at TA = 25 oC , TP = 1mS ( Note 1 ) P e a k Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 ) S t e a d y State Power Dissipation at TL = 75 C ( Note 2 ) P e a k Forward Surge Current, 8.3mS single half sine waves u p e r i m p o s e d on rated load ( JEDEC METHOD ) ( Note 3 ) M a x i m u m Instantaneous Forward Voltage at 25A for u n i d i r e c t i o n a l only ( Note 4 ) Operating and Storage Temperature Range
o o
SYMBOL P PPM I PPM P M( AV ) I FSM VF T J , TSTG
VA L U E M i n i m u m 400 SEE TABLE 1 1.0 40 3.5/6.5 -65 to + 175
UNITS Watts Amps Watts Amps Volts
0
C 1998-8
N O T E S : 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25 C per Fig.2. 2. Mounted on 0.2 X 0.2" (5.0 X 5.0mm) copper pad to each terminal. 3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum. 4. VF = 3.0V max. for devices of V(BR) 200V.
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RECTRON
RECTRON
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