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Details, datasheet, quote on part number:P4FMAJ51-W
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Datasheet text preview:
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
TVS P4FMAJ SERIES
SURFACE MOUNT GPP TRANSIENT VOLTAGE SUPPRESSOR
400 WATT PEAK POWER 1.0 WATT STEADY STATE
FEATURES
* * * * * * Plastic package has underwriters laboratory Glass passivated chip construction 400 watt surage capability at 1ms Excellent clamping capability Low zener impedance Fast response time
DO-214AC
0.067 (1.70) 0.051 (1.29) 0.180(4.57) 0.160(4.06) 0.110 (2.79) 0.086 (2.18)
R a t i n g s at 25 C ambient temperature unless otherwise specified.
o
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R a t i n g s at 25 o C ambient temperature unless otherwise specified.
0.091 (2.31) 0.067 (1.70) 0.059 (1.50) 0.035 (0.89) 0.209 (5.31) 0.185 (4.70)
0.012 (0.305) 0.006 (0.152)
0.008 (0.203) 0.004 (0.102)
D i m e n s i o n s in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types P4FMAJ6.8 thru P4FMAJ400 E l e c t r i c a l characteristics apply in both direction
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) R AT I N G S P e a k Power Dissipation at TA = 25 oC, TP = 1mS ( Note 1 ) Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 ) Steady State Power Dissipation at TL = 75 C ( Note 2 ) P e a k Forward Surge Current, 8.3mS single half sine waves u p e r i m p o s e d on rated load ( JEDEC METHOD ) ( Note 3 ) Maximum Instantaneous Forward Voltage at 25A for u n i d i r e c t i o n a l only ( Note 4 ) Operating and Storage Temperature Range
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SYMBOL P PPM I PPM P M ( AV ) I FSM VF T J , TSTG
VA L U E M i n i m u m 400 SEE TABLE 1 1.0 40 3.5/6.5 -55 to + 150
UNITS Watts Amps Watts Amps Volts
0
C 2002-12
N O T E S : 1. Non-repetitive current pulse, per Fig.3 and derated above TA = 25 C per Fig.2. 2. Mounted on 0.2 X 0.2" (5.0 X 5.0mm) copper pad to each terminal. 3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum. 4. VF = 3.0V max. for devices of V(BR) 200V.
RATING AND CHARACTERISTIC CURVES ( P4FMAJ6.8 THRU P4FMAJ400CA )
FIG. 1 - PEAK PULSE POWER RATING CURVE 100
PPPM, PEAK PULSE POWER, KW
Non-Repetitive Pulse Waveform Shown in Fig.3 TA = 25
FIG. 2 - PULSE DERATING CURVE
PEAK PULSE POWER (PPP) OR CURRENT
(IPP) DERATING IN PERCENTAGE,%
100
75
10
50
1.0
0.2X0.2"(5.0X5.0mm) copper pad areas
25
0.1 0.1uS
0 1.0uS 10uS 100uS 1.0mS 10mS 0 25 50 75 100 125 150 175 ) 200 TP, PULSE WIDTH, sec TA, AMBIENT TEMPERATURE,(
FIG. 3 - PULSE WAVEFORM 150
IPPM, PEAK PULSE CURRENT,%
tr = 10usec.
Peak Value IPPM
FIG. 4 - TYPICAL JUNCTION CAPACITANCE 100000
Pulse Width (td) is Defined as the Point Where the Peak Current Decays to 50% of IPPM
CJ, CAPACITANCE, pF
f = 1.0 MHz Vsig = 50mVp-p TJ = 25
100
IPPM HALF VALUE 2 10/1000usec. Waveform as Defined by R.E.A.
10000
Measured at Zero Bias
50
1000
Measured at Devices Stand off Voltage,VWM
0 0 1.0 2.0 t, TIME,mS 3.0 4.0
10 1.0 10 100 200 V(BR), BREAKDOWN VOLTACE, VOLTS
RECTRON
RATING AND CHARACTERISTIC CURVES ( P4FMAJ6.8 THRU P4FMAJ400CA )
FIG. 5 - STEADY STATE POWER DERATING CURVE
PM(AV), STEADY STATE POWER DISSIATION, WATTS
FIG. 6 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL 50
IFSM, PEAK FORWARD SURGE CURRENT AMPERES
8.3ms Single Half Sine-Wave (JEDED Method) TJ = TJ max.
1.00
60Hz Resistive or Inductive Load
0.75
40 30 20 10
0.50
0.25
0 0 25 50 75 100 125 150 175 200 ) TL, LEAD TEMPERATURE (
0 1 10 NUMBER OF CYCLES AT 60 Hz 100
FIG. 7 -TYPICAL REVERSE LEAKAGE
ID, INSTANTANEOUS REVERSE LEAKAGE CHRRENT, MICROAMPERES
CHARACTERISTICS 100
10
Measured at Devices Stand-off Voltage, VWM
1
0.1
TJ = 25
0.01 0 100 200 300 400 600 V(BR) BREAKDOWN VOLTAGE, VOLTS
RECTRON
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