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Details, datasheet, quote on part number:RS1001M
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Datasheet text preview:
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RS1001M THRU RS1007M
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 10 Amperes
FEATURES
* * * * * Low leakage Low forward voltage Mounting position: Any Surge overload rating: 200 amperes peak Silver-plated copper leads
RS-10M
.995 (25.3) .983 (24.7)
.602 (15.3) .578 (14.7) .157 (4)
MECHANICAL DATA
.382 (9.7) .366 (9.3)
* UL listed the recognized component directory, file #E94233 * Epoxy: Device has UL flammability classification 94V-O
.189 (4.8) .173 (4.4) .150 (3.8) .134 (3.4)
f.134 (3.4) .122 (3.1)
(3.7) (3.3) (18.0) (17.0)
.074 (1.9) .059 (1.5)
.057 (1.45) .041 (1.05) .083 (2.1) .069 (1.7) .043 (1.1) .035 (0.9)
.114 (2.9) .098 (2.5) .031 (0.8) .023 (0.6)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R a t i n g s at 25 o C ambient temperature unless otherwise specified. S i n g l e phase, half wave, 60 Hz, resistive or inductive load. F o r capacitive load, derate current by 20%.
.303 (7.7) .287 (7.3)
.303 (7.7) .287 (7.3)
.303 (7.7) .287 (7.3)
D i m e n s i o n s in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) R AT I N G S M a x i m u m Recurrent Peak Reverse Voltage M a x i m u m RMS Bridge Input Voltage M a x i m u m DC Blocking Voltage M a x i m u m Average Forward Rectified Output Current at Tc = 100o C w i t h heatsink P e a k Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load Operating and Storage Temperature Range TJ,TSTG -55 to + 150
0
SYMBOL VRRM VRMS V DC IO I FSM
RS1001M RS1002M RS1003M RS1004M RS1005M RS1006M RS1007M UNITS 50 35 50 100 70 100 200 140 200 400 280 400 10 200 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts Amps Amps C
E L E C T R I C A L CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS M a x i m u m Forward Voltage Drop per element at 5.0A DC M a x i m u m Reverse Current at Rated D C Blocking Voltage per element @ T A = 25 oC @ T C = 100 oC SYMBOL VF IR 0.2 mAmps 2002-8 RS1001M RS1002M RS1003M RS1004M RS1005M RS1006M RS1007M UNITS 1.1 5.0 Volts uAmps
.146 .130 .708 .669
RATING AND CHARACTERISTIC CURVES (RS1001M THRU RS1007M)
INSTANTANEOUS FORWARD CURRENT, (A)
TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 30 20 10 5 2 1 0.5 0.2 0.1 0.4 0.5 0.6 0.7 0.8 0.9
pulse test per one diode TC = 150 (TYP) TC = 25 (TYP)
POWER DISSIPATION 34
POWER DISSIPATION PF(W)
sine wave Tj=150
30
20
10
0 1 1.1 1.2
0
2
4
6
8
10
12
14
INSTANTANEOUS FORWARD VOLTAGE, (V)
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
SURGE FORWARD CURRENT CAPABILITY
PEAK FORWARD SURGE CURRENT, (A)
sine wave
0
IFSM
TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT, (A)
200 180 160 140 120 100 80 60 1
3
on glass-epoxi substrate
8.3ms 8.3ms
1 cycle non-repetitive Tj=25
2
P.C.B sine wave R-load free in air
1
2
5 10 20 NUMBER OF CYCLE
50
100
0 0
40
80
120 )
160
AMBIENT TEMPERATURE, (
TYPICAL FORWARD CURRENT DERATING CURVE 12
AVERAGE FORWARD CURRENT, (A)
heatsink Tc Tc
CONTACT THERMAL RESISTANCE fcf 1.6 1.5 1.4 1.3
with thermal compound
6 4 2 0 80
sine wave R-load on heatsink
THERMAL RESISTANCE (
8
/W )
10
1.2 1.1 1
90
100 110 120 130 140 150 160 CASE TEMPERATURE, ( )
2
3
4
5
6
7
8
MOUNTING TORQUE (Kg.cm)
RECTRON
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