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Details, datasheet, quote on part number:RS2504M
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Datasheet text preview:
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
RS2501M THRU RS2507M
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER
VOLTAGE RANGE 50 to 1000 Volts CURRENT 25 Amperes
FEATURES
* * * * * * Low leakage Low forward voltage Mounting position: Any Surge overload rating: 300 amperes peak Ideal for printed cikcuit boakds High forward surge current capability
RS-25M
.189 (4.8) 1.193 (30.3) 1.169 (29.7)
.197 (5)
MECHANICAL DATA
* UL listed the recognized component directory, file #E94233 * Epoxy: Device has UL flammability classification 94V-O
.150 (3.8) .134 (3.4)
.800 (20.3) .697 (17.7) .441 (11.2) .425 (10.8)
.173 (4.4)
.106 (2.7) .096 (2.3) .094 (2.4) .078 (2.0)
.165 (4.2) .150 (3.8) .708 (18.0) .669 (17.0)
.114 (2.9) .098 (2.5)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R a t i n g s at 25 o C ambient temperature unless otherwise specified. S i n g l e phase, half wave, 60 Hz, resistive or inductive load. F o r capacitive load, derate current by 20%.
.043 (1.1) .035 (0.9) .402 (10.2) .386 (9.8) .303 (7.7) .287 (7.3) .303 (7.7) .287 (7.3)
.031 (0.8) .023 (0.6)
D i m e n s i o n s in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) R AT I N G S M a x i m u m Recurrent Peak Reverse Voltage M a x i m u m RMS Bridge Input Voltage M a x i m u m DC Blocking Voltage M a x i m u m Average Forward Rectified Output Current at Tc = 100o C w i t h heatsink P e a k Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load T y p i c a l Thermal Resistance Operating and Storage Temperature Range RJC RJL TJ,TSTG 1.25 5.0 -55 to + 150
0
SYMBOL VRRM VRMS V DC IO I FSM
RS2501M RS2502M RS2503M RS2504M RS2505M RS2506M RS2507M UNITS 50 35 50 100 70 100 200 140 200 400 280 400 25 300 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts Amps Amps
E L E C T R I C A L CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS M a x i m u m Forward Voltage Drop per element at 12.5A DC M a x i m u m Reverse Current at Rated D C Blocking Voltage per element @ T A = 25 o C @ T C = 100 oC SYMBOL VF IR 0.2 m Amps 2002-12 RS2501M RS2502M RS2503M RS2504M RS2505M RS2506M RS2507M UNITS 1.1 5.0 Volts uAmps
f.134 (3.1) .122 (3.1)
C/ W
0
C
RATING AND CHARACTERISTIC CURVES (RS2501M THRU RS2507M)
TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS POWER DISSIPATION 60
sine wave Tj=150
INSTANTANEOUS FORWARD CURRENT, (A)
30 20 10 5 2 1 0.5 0.2 0.1 0.2 0.4 0.6 0.8 1
pulse test per one diode TC = 150 (TYP)
POWER DISSIPATION PF(W)
50
40
TC = 25 (TYP)
30 20
10 0 1.2 1.4 1.6
0
4
8
12
16
20
24
INSTANTANEOUS FORWARD VOLTAGE, (V) SURGE FORWARD CURRENT CAPABILITY
AVERAGE RECTIFIED FORWARD CURRENT, Io (A)
TYPICAL FORWARD CURRENT DERATING CURVE 4
PEAK FORWARD SURGE CURRENT, (A)
300
0
AVERAGE FORWARD CURRENT, (A)
sine wave
on glass-epoxi substrate
IFSM
8.3ms 8.3ms
3
250
1 cycle non-repetitive Tj=25
P.C.B
soldering land 5mmf sine wave R-load free in air
2
200
1
150 1
2
5
10
20
50
100
0 0
40
80
120 )
160
NUMBER OF CYCLE TYPICAL FORWARD CURRENT DERATING CURVE 30 1.8
heatsink Tc Tc
AMBIENT TEMPERATURE, (
CONTACT THERMAL RESISTANCE fcf
with thermal compound
AVERAGE FORWARD CURRENT, (A)
28 26 24 22 20 18 16 14 12 10 80 90
1.5
/W)
sine wave R-load on heatsink
THERMAL RESISTANCE (
1.2
0.9
0.6
0.3 0
100 110 120 130 140 )
150 160
2
3
4
5
6
7
8
CASE TEMPERATURE, (
MOUNTING TORQUE (Kg.cm)
RECTRON
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