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Part: SF52-B
Category:
Discrete
-> Diodes & Rectifiers
Description: 5.0A,100V,35ns,DO-201AD
Company: Rectron
Datasheet: Download SF52-B datasheet File size : 49 kB
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Datasheet text preview:
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
SF51 THRU SF56
GLASS PASSIVATED SUPER FAST RECTIFIER
VOLTAGE RANGE 50 to 400 Volts CURRENT 5.0 Amperes
FEATURES
* * * * * * * High reliability Low leakage Low forward voltage High current capability Super fast switching speed High surge capability Good for switching mode circuit
DO-201AD
MECHANICAL DATA
* * * * * C a s e : Molded plastic E p o x y : Device has UL flammability classification 94V-O L e a d : MIL-STD-202E method 208C guaranteed M o u n t i n g position: Any W e i g h t : 1.18 grams
.052 (1.3) DIA. .048 (1.2)
1.0 (25.4) MIN.
.375 (9.5) .335 (8.5) .220 (5.6) DIA. .197 (5.0)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
R a t i n g s at 25 o C ambient temperature unless otherwise specified. S i n g l e phase, half wave, 60 Hz, resistive or inductive load. F o r capacitive load, derate current by 20%.
1.0 (25.4) MIN.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) R AT I N G S M a x i m u m Recurrent Peak Reverse Voltage M a x i m u m RMS Volts M a x i m u m DC Blocking Voltage M a x i m u m Average Forward Current a t TA = 55 oC P e a k Forward Surge Current IFM (surge):8.3 ms single half s i n e - w a v e superimposed on rated load (JEDEC method) T y p i c a l Junction Capacitance (Note 2) Operating and Storage Temperature Range SYMBOL VR R M VRMS V DC IO I FSM CJ T J , TSTG 50 -65 to + 150 SF51 50 35 50 SF52 100 70 100 SF53 150 105 150 5.0 150 30 SF54 200 140 200 SF55 300 210 300 SF56 400 280 400 UNITS Volts Volts Volts Amps Amps pF
0
C
E L E C T R I C A L CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS M a x i m u m DC Reverse Current at Rated DC Blocking Voltage M a x i m u m Forward Voltage at 5.0A DC M a x i m u m Reverse Recovery Time (Note 1) N O T E S : 1. Test Conditions: IF=0.5A, IR=-1.0A, IRR=-0.25A. 2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts. @ T A = 25 o C @ T A =125 o C IR VF trr 0.95 35 SYMBOL SF51 SF52 SF53 5.0 150 1.25 SF54 SF55 SF56 UNITS uAmps Volts nSec 2001-5
RATING AND CHARACTERISTIC CURVES ( SF51 THRU SF56 )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50 NONINDUCTIVE 10 NONINDUCTIVE
trr +0.5A
(-) PULSE
GENERATOR
AVERAGE FORWARD CURENT, (A)
FIG. 2 - TYPICAL FORWARD CURRENT DERATING CURVE 6.0 5.0 4.0 3.0 2.0 1.0 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE ( )
Single Phase Half Wave 60Hz Resistive or Inductive Load
(+) 25 Vdc (approx) (-)
D.U.T
0 -0.25A
(NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) (+)
-1.0A
NOTES:1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms.
1cm
SET TIME BASE FOR 10 ns/cm
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS REVERSE CURRENT, (uA)
100
TJ = 150
100
TJ = 100
SF
51
~S
F5
10
10
4
.1
TJ = 25
.1
Pulse Width = 300uS 1% Duty Cycle
.01 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
.01 0 .2 .4 .6 .8 1.0 1.2 1.4
INSTANTANEOUS FORWARD VOLTAGE, (V)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
PEAK FORWARD SURGE CURRENT, (A)
175 150 125 100 75 50 25 0 1 2 5 10 20 50 100 NUMBER OF CYCLES AT 60Hz
8.3ms Single Half Sine-Wave (JEDEC Method)
200 100 60 40 20 10 6 4 2 1 .1 .2 .4 1.0 2 4 10 20 40 100
TJ = 25
SF
55
~S
1.0
1.0
F5
TJ = 25
6
SF5
1~S
F54
SF5
5~S
F56
REVERSE VOLTAGE, ( V )
RECTRON
Others parts begin by sf
SF-1 SF-2 SF-3 SF-4 SF-5 SF-6 SF-7 SF-8 SF-9 SF-10 SF-11 SF-12 SF-13 SF-14 SF-15 SF-16
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