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Details, datasheet, quote on part number:1SS400G
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Datasheet text preview:
1SS400G
Diodes
Switching diode
1SS400G
Applications High frequency switching External dimensions (Units : mm)
1.0±0.05
1.4±0.05
Features 1) Ultra small mold type. (VMD2) 2) High reliability.
0.6±0.05 0.27±0.03
CATHODE MARK
0.13±0.03
3
0.5±0.05
Construction Silicon epitaxial planar
ROHM : VMD2 EIAJ : JEDEC : -
Absolute maximum ratings (Ta=25°C)
Parameter Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Junction temperature Storage temperature Symbol VRM VR IFM IO Isurge Tj Tstg Limits 90 80 225 100 500 150 -55~+150 Unit V V mA mA mA
°C °C
Electrical characteristics (Ta=25°C)
Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR CT trr Min. - - - - Typ. - - - - Max. 1.2 100 3.0 4.0 Unit V nA pF ns IF=100mA VR=80V VR=0.5V , f=1MHz VR=6V , IF=10mA , RL=100 Conditions
1/2
1SS400G
Diodes
Electrical characteristic curves (Ta=25°C)
100
FORWARD CURRENT : IF (A)
Ta=75°C
100
Ta=125°C
10
REVERSE CURRENT : IR (A)
Ta=25°C Ta=-25°C
1
1
Ta=75°C
CAPACITANCE : Ct (pF)
10
Ta=125°C
10
1.0
0.1
0.1
Ta=25°C
0.01
0.01
0.001 0
200
400
600
800
1000
0.001 0
20
40
60
80
100
0.1 0
5
10
15
20
25
30
35
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig.1 Forward characteristics
Fig.2 Reverse characteristics
Fig.3 Characteristics
2/2
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