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Part: 2SB1238

Category:
 Discrete
   -> Transistors

Description:

Company: ROHM Electronics

Datasheet: Download 2SB1238 datasheet     File size : 147 kB

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Datasheet text preview:
2SB1189 / 2SB1238
Transistors

Medium power transistor (-80V, -0.7A)
2SB1189 / 2SB1238
!Features 1) High breakdown voltage, BVCEO=-80V, and high current, IC=-0.7A. 2) Complements the 2SD1767 / 2SD1859. !External dimensions (Units : mm)
2SB1189
4.0 1.0 2.5 0.5

1.5 0.4

(1)

3.0

!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SB1189 2SB1238 Tj Tstg Symbol VCBO VCEO VEBO IC PC Limits -80 -80 -5 -0.7 0.5 2 1 150 -55~+150 °C °C W
1 2

0.5

(3)

V A

0.4

V V

ROHM : MPT3 EIAJ : SC-62

(1) Base (2) Collector (3) Emitter

2SB1238
6.8 2.5

1 When mounted on a 40×40×0.7 mm ceramic board. 2 Printed circuit board 1.7 mm thick, collector plating 1cm2 or larger.

0.65Max.

1.0

!Packaging specifications and hFE
Type Package hFE Marking Code Basic ordering unit (pieces) 2SB1189 MPT3 PQR 2SB1238 ATV PQR - TV2 2500

0.9

0.5 (1) (2) (3) 2.54 2.54

Denotes hFE

BD T100 1000

1.05

14.5

4.4

1.5
0.45

Unit

1.5 0.4

Taping specifications

ROHM : ATV

(1) Emitter (2) Collector (3) Base

!Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -80 -80 -5 - - - 82 - - Typ. - - - - - -0.2 - 100 14 Max. - - - -0.5 -0.5 -0.4 390 - 20 Unit V V V µA µA V - MHz pF IC=-50µA IC=-2mA IE=-50µA VCB=-50V VEB=-4V IC/IB=-500mA/-50mA VCE/IC=-3V/-0.1A VCE=-10V, IE=50mA, f=100MHz VCB=-10V, IE=0A, f=1MHz Conditions

4.5

1.6

(2)




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