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Part: 2SC5729
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download 2SC5729 datasheet File size : 129 kB
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2SC5729
Transistor
Medium power transistor (30V, 0.5A)
2SC5729
!Features 1) High speed switching. (Tf : Typ. : 50ns at IC = 500mA) 2) Low saturation voltage, typically (Typ. : 150mV at IC = 100mA, IB = 10mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2047 !External dimensions (Units : mm)
(1)
0.65 0.65
UMT3
0.3
(3)
1.25 2.1
0.2
0.15
(2)
(1) Emitter (2) Base (3) Collector
0.1Min.
Each lead has same dimensions
Abbreviated symbol : UW
!Applications Small signal low frequency amplifier High speed switching
!Structure NPN Silicon epitaxial planar transistor
!Packaging specifications
Package Type Code Basic ordering unit (pieces) 2SC5729 Taping T106 3000
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperrature Range of storage temperature
1 Pw=10ms 2 Each terminal mounted on a recommended land.
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Limits 30 30 6 0.5 1.0 200 150 -55~+150
Unit V V V A A mW °C °C
1 2
0.7
0.9
1.3
2.0
1/3
2SC5729
Transistor
!Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter staturation voltage DC current gain Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol BVCEO Min. 30 30 6 - - - 120 - - - - - Typ. - - - - - 150 - 300 5 40 120 50 Max. - - - 1.0 1.0 300 390 - - - - - Unit V V V µA µA mV - MHz pF ns ns ns IC=100µA IC=1mA IE=100µA VCB=20V VEB=4V IC=100mA, IB=100mA VCE=2V, IC=50mA VCE=10V, IE= -100mA, f=1MHz VCB=10V, IE=0A, f=1MHz IC=500mA IB1=50mA IB2= -50mA VCC ~ 25V Conditions
Collector-emitter breakdown voltage BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Ton Tstg Tf
!hFE RANK
Q 120-270 R 180-390
!Electrical characteristic curves
10
Single non repoetitive pulse
1000
1000
Ta=25°C VCC=25V IC/IB=10/1
VCE=2V
COLLECTOR CURRENT : IC (A)
1ms 10ms
1
Ta=125°C
DC CURRENT GAIN : hFE
100ms
0.1
SWITCHING TIME (ns)
Tstg
DC
100
100
Ta=25°C Ta=-40°C
Tf Ton
0.01
0.001 0.1
1
10
100
10 0.01
0.1
1
10 0.001
0.01
0.1
1
COLLECTOR EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 Safe operating area
1000
Fig.2 Switching Time
COLLECTOR SATURATION VOLTAGE : VCE (sat)
10
IC/IB=10/1
Fig.3 DC current gain vs. collector current
10
Ta=25°C
DC CURRENT GAIN : hFE
VCE=5V
COLLECTOR SATURATION VOLTAGE : VCE(sat)
1
1
VCE=3V
100
IC/IB=100/1
VCE=2V
Ta=125°C
0.1
Ta=25°C Ta=-40°C
0.1
IC/IB=20/1 IC/IB=10/1
0.01 0.001 0.01 0.1 1
10 0.001
0.01
0.1
1
0.01 0.001
0.01
0.1
1
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current
Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs. collector current vs. collector current
2/3
2SC5729
Transistor
1000
IC/IB=10/1
1
VCE=2V
1000
Ta=-40°C
Ta=25°C
Ta=125°C 0.1
Ta=25°C
TRANSITION FREQUENCY : fT (MHz)
BASE EMITTER SATURATION VOLTAGE : VBE(sat)
Ta=25°C VCE=10V
COLLECTOR CURRENT : IC (A)
100
100
Ta=-40°C
Ta=125°C
10 0.001
0.01
0.01
0.1
1
0
0.5
1
1.5
2
10 -0.001
-0.01
-0.1
-1
COLLECTOR CURRENT : IC (A)
BASE TO EMITTER VOLTAGE : VBE (V)
EMITTER CURRENT : IE (A)
Fig.7 Base-emitter saturation voltage vs. collector current
Fig.8 Ground emitter propagation characteristics
Fig.9 Transition frequency
COLLECTOR OUTPUT CAPACITANCE : COB (pF)
100
Ta=25°C f=1MHz
10
1 0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.10 Collector output capacitance
!Switching characteristics measurement circuits
RL=50 VIN IB1 IC VCC 25V IB2 1%
PW PW 50 S Duty cycle
IB1 Base current waveform 90% Collector current waveform Ton IC 10% Tstg Tf IB2
3/3
Others parts begin by 2s
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