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Part: 2SD1856
Category:
Discrete
-> Transistors
-> Bipolar
-> Power
-> Medium Power
-> NPN
Description: Medium Power Transistor (motor Relay or Solenoid Drive)
Company: ROHM Electronics
Datasheet: Download 2SD1856 datasheet File size : 198 kB
Request For quote: Find where to buy 2SD1856
Datasheet text preview:
2SD2212 / 2SD2143 / 2SD1866
Transistors
Medium Power Transistor (Motor, Relay drive) (60±10V, 2A)
2SD2212 / 2SD2143 / 2SD1866
Features 1) Built-in zener diode between collector and base. 2) Strong protection against reverse surges due to "L" loads. 3) Built-in resistor between base and emitter. 4) Built-in damper diode. External dimensions (Units : mm)
2SD2212
1.0
1.5 0.4
4.0 2.5 0.5
(1)
3.0
0.5
(3)
1.5 0.4
1.5
4.5
1.6
(2)
ROHM : MPT3 EIAJ : SC-62
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature 2SD2212 2SD2143 2SD1866 Symbol VCBO VCES VEBO IC PC Tj Tstg Limits 60±10 60±10 6 2 3 2 10 1 150 -55~+150 Unit V V V A(DC) A(Pulse) 1 W 2 W(Tc=25°C) W 3 °C °C
(1) 0.9 0.75
2SD2143
2.3
0.4
5.5
1.5
5.1
(2)
0.9
(3) 2.3 0.65
C0.5
1 Single pulse Pw=100ms 2 When mounted on a 40×40×0.7mm ceramic board. 3 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger.
1.0
0.5
0.8Min.
0.5
1.5 2.5 9.5
2.3
Packaging specifications and hFE
Type 2SD2212 MPT3 1k~10k T100 1000 2SD2143 CPT3 1k~10k TL 2500 2SD1866 ATV 1k~10k TV2 2500
ROHM : CPT3 EIAJ : SC-63
Package hFE Code Basic ordering unit (pieces)
2SD1866
6.8
2.5
Equivalent circuit
C
0.65Max.
1.0 14.5
0.5
B
(1)
(2) 2.54
(3) 2.54 1.05 0.45
R1 E : Emitter B : Base C : Collector R1 R2
R2 E 3.5k 300
0.9
Taping specifications
4.4
ROHM : ATV
Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance
Measured using pulse current.
Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE Cob
Min. 50 50 - - - 1000 -
Typ. - - - - - - 25
Max. 70 70 1.0 3 1.5 10000 -
Unit V V µA mA V - pF
Conditions IC=50µA IC=5mA VCB=40V VEB=5V IC/IB=1A/1mA VCE=2V, IC=1A VCB=10V, IE=0A, f=1MHz
6.5
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
(1) Emitter (2) Collector (3) Base
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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