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Part: 2SD1857A
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download 2SD1857A datasheet File size : 198 kB
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Datasheet text preview:
2SD2211 / 2SD1918 / 2SD1857A
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
!Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency.(fT = 80MHZ) 4) Complements the 2SB1275 / 2SB1236A. !External dimensions (Units : mm)
2SD2211
1.0
1.5 0.4
(1)
4.0 2.5 0.5
3.0
0.5
(3)
1.5 0.4
1.5
4.5
1.6
(2)
ROHM : MPT3 EIAJ : SC-62
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SD1857A Collector power dissipation 2SD2211 2SD1918 Tj Tstg PC Symbol VCBO VCEO VEBO IC Limits 160 160 5 1.5 3 1 2 1 10 150 -55 +150 Unit
0.75
V V V A(DC) A(Pulse) W W W(Tc=25°C) °C °C
1 2 3
2SD1918
5.5 1.5
(3) (2) (1)
2.3
0.9
0.4
0.9
0.65 2.3
1.0 0.5
0.5
1.5 2.5 9.5
Junction temperature Storage temperature
2.3
0.8Min.
5.1 6.5
C0.5
1 Single pulse Pw=100ms 2 Printed circuit board 1.7mm thick, collector plating 1cm2 or larger. 3 When mounted on a 40 x 40 x 0.7mm ceramic board.
ROHM : CPT3 EIAJ : SC-63
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
2SD1857A
6.8 2.5
!Packaging specifications and hFE
0.65Max.
1.0
0.9
Type Package hFE Marking Code Basic ordering unit (pieces)
* Denotes hFE
2SD2211 MPT3 QR DQ* T100 1000
2SD1918 2SD1857A CPT3 Q - TL 2500 ATV PQ - TV2 2500
(1) (2) (3) 2.54 2.54
0.5
1.05
14.5
4.4
0.45
Taping specifications
ROHM : ATV
(1) Emitter (2) Collector (3) Base
!Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current 2SD2211,2SD1918 hFE 2SD1857A fT Cob Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) Min. 160 160 5
- - - -
Typ.
- - - - - - - - -
Max.
- - -
Unit V V V µA µA V V
- -
Conditions IC = 50µA IC = 1mA IE = 50µA VCB = 120V VEB = 4V IC/IB = 1A/0.1A IC/IB = 1A/0.1A VCE/IC = 5V/0.1A VCE = 5V , IE = -0.1A , f = 30MHz VCB = 10V , IE = 0A , f = 1MHz
1 1 2 1.5 390 270
- -
120 82
- -
transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
80 20
MHz pF
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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