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Part: 2SD1862
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download 2SD1862 datasheet File size : 198 kB
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Datasheet text preview:
2SD1766 / 2SD1758 / 2SD1862
Transistors
Medium power transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
!Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 !External dimensions (Units : mm)
2SD1766
0.5±0.1
4.5+0.2 -0.1 1.6±0.1 1.5 +0.2 -0.1
2SD1758
1.5±0.3
6.5±0.2 5.1+0.2 -0.1 C0.5 2.3+0.2 -0.1 0.5±0.1
4.0±0.3
2.5 +0.2 -0.1
5.5+0.3 -0.1
1.0±0.2
0.4 +0.15 -0.0 0.4±0.1 1.5±0.1
0.75 0.9 2.3±0.2
0.65±0.1
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
2.3±0.2
0.55±0.1 1.0±0.2
!Structure Epitaxial planar type NPN silicon transistor
Abbreviated symbol : DB ROHM : MPT3 EIAJ : SC-62 (1) Base (2) Collector (3) Emitter
(1) (2) (3)
ROHM : CPT3 EIAJ : SC-63
(1) Base (2) Collector (3) Emitter
2SD1862
6.8±0.2 2.5±0.2
0.65Max.
1.0
0.5±0.1 (1) (2) (3)
2.54 2.54 1.05
14.5±0.5
4.4±0.2
0.9
0.45±0.1
ROHM : ATV
(1) Emitter (2) Collector (3) Base
Denotes hFE
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SD1766 2SD1758 2SD1862 Junction temperature Storage temperature Tj Tstg PC Symbol VCBO VCEO VEBO IC Limits 40 32 5 2 2.5 0.5 2 10 1 150 -55~+150 Unit V V V A (DC) A (Pulse) 1 W 2
Collector power dissipation
W (TC=25°C) W °C °C 3
1 Single pulse, PW=20ms 2 When mounted on a 40×40×0.7 mm ceramic board. 3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm2 or lager.
2.5
(1)
(2)
(3)
9.5±0.5
0.9
1.5
2SD1766 / 2SD1758 / 2SD1862
Transistors
!Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio
2SD1766,2SD1758
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob
Min. 40 32 5 - - 82 120 - - -
Typ. - - - - - - - 0.5 100 30
Max. - - - 1 1 390 390 0.8 - -
Unit V V V µA µA - V MHz pF IC=50µA IC=1mA IE=50µA VCB=20V VEB=4V
Conditions
2SD1862
VCE=3V, IC=0.5A IC/IB=2A/0.2A VCE=5V, IE=-50mA, f=100MHz VCB=10V, IE=0A, f=1MHz
Collector-emitter saturation voltage Transition frequency Output capacitance
Measured using pulse current.
!Packaging specifications and hFE
Package Code Type 2SD1766 2SD1758 2SD1862 hFE PQR PQR QR - - -
Basic ordering unit (pieces)
Taping T100 1000 TL 2500 - TV2 2500 - -
hFE values are classified as follows :
Item hFE P 82~180 Q 120~270 R 180~390
!Electrical characteristic curves
2000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (A)
1000 500 200 100 50 20 10 5 2 1 0
Ta=25°C VCE=3V
0.5
Ta=25°C 3.0mA
2.7mA 2.4mA 2.1mA 1.8mA
DC CURRENT GAIN : hFE
Ta=25°C 500
0.4
0.3 1.5mA 1.2mA 0.2 0.9mA 0.1 0.6mA 0.3mA 0 IB=0A 0 0.4 0.8 1.2 1.6 2.0
200 VCE=3V 1V
100
50
20
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
5
10 20
50 100 200
500 1A 2A
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics
Fig.3 DC current gain vs. collector current
2SD1766 / 2SD1758 / 2SD1862
Transistors
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) BASE SATURATION VOLTAGE : VBE(sat) (V)
TRANSITION FREQUENCY : fT (MHz)
Ta=25°C 500
2
Ta=25°C
1000 500
Ta=25°C VCE=5V
1 IC/IB=10 0.5
200
200
100 IC/IB=50 50 20 20 10 10 20
100
0.2
50
0.1
5
50 100 200 500 1A 2A
5
10 20
50 100 200
500 1A 2A
20 -1
-2
-5 -10 -20
-50 -100 -200 -500 -1A
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IE (mA)
Fig.4 Collector-emitter saturation voltage vs. collector current
Fig.5 Collector-emitter saturation voltage vs. collector current
Fig.6 Transition frequency vs. emitter current
COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)
1000 500 Cib 200 100 50 Cob
COLLECTOR CURRENT : IC (A)
2 1 0.5 0.2 0.1 0.05 Ta=25°C Single 0.02 nonrepetitive pulse 0.01 0.1 0.2 0.5 1
COLLECTOR CURRENT : IC (A)
Ta=25°C f=1MHz IE=0A IC=0A
5
5 2 1 0.5 0.2 0.1 0.05 0.02 2 5 10 20 50
PW=100ms
PW=10ms 100ms DC
20 10
0.5
1
2
5
10
20
0.01 0.1
TC=25°C Single nonrepetitive pulse
0.2 0.5 1 2 5 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
Fig.8 Safe operating area (2SD1766)
Fig.9 Safe operating area (2SD1758)
3 2
COLLECTOR CURRENT : IC (A)
PW
1 0.5
Ic Max Ic Max Pulse
=1 0m s
0m s
PW 0 =1
DC
0.2 0.1 0.05 Ta=25°C Single nonrepetitive pulse 0.2 0.5 1
2
5
10
20
50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area (2SD1862)
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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