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Part: 2SD1863
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download 2SD1863 datasheet File size : 198 kB
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2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
Power Transistor (80V, 1A)
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
!Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity 4) Low VCE (sat) 5) Complements the 2SB1260 / 2SB1241 / 2SB1181 !External dimensions (Units : mm)
2SD1898
0.5±0.1
4.5+0.2 -0.1 1.6±0.1
1.5 +0.2 -0.1
4.0±0.3
2.5+0.2 -0.1
(1)
1.0±0.2
(2)
(3) 0.4±0.1 1.5±0.1
0.4+0.15 -0.0
0.4±0.1 1.5±0.1
0.5±0.1 3.0±0.2
!Structure Epitaxial planer type NPN silicon transistor
ROHM : MPT3 EIAJ : SC-62 Abbreviated symbol : DF
(1) Base (2) Collector (3) Emitter
2SD1733
1.5±0.3
2SD1768S
4±0.2 2±0.2
3±0.2
5.5+0.3 -0.1
9.5±0.5
(15Min.)
0.9
1.5
0.75 0.9
0.65±0.1
2.5
0.45+0.15 -0.05
3Min.
6.5±0.2 5.1+0.2 -0.1
C0.5
2.3+0.2 -0.1 0.5±0.1
0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2
5
2.5 +0.4 -0.1
0.5
+0.15 0.45 -0.05
(1) (2) (3)
(1) (2) (3)
Taping specifications
ROHM : CPT3 EIAJ : SC-63 (1) Base (2) Collector (3) Emitter
ROHM : SPT EIAJ : SC-72
(1) Emitter (2) Collector (3) Base
2SD1863
6.8±0.2 2.5±0.2
0.65Max.
1.0
0.5±0.1 (1) (2) (3)
2.54 2.54 1.05 0.45±0.1
Taping specifications (1) Emitter (2) Collector (3) Base
ROHM : ATV
14.5±0.5
4.4±0.2
0.9
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Limits 100 80 5 1 2 0.5 2SD1898 2 2SD1733 Collector power dissipation 2SD1768S 2SD1863 Junction temperature Storage temperature Tj Tstg PC 1 10 0.3 1 1.2 150 -55~+150 °C °C W 2 W (Tc=25°C) W 3 Unit V V V A (DC) A (Pulse) 1
1 Pw=20ms, duty=1 / 2 2 Printed circuit board 1.7mm thick, collector copper plating 1cm2 or larger. 3 When mounted on a 40×40×0.7mm ceramic board.
!Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current 2SD1863 DC current 2SD1733, 2SD1898 transfer ratio 2SD1768S Collector-emitter saturation voltage Transition frequency Output capacitance
Measured using pulse current
Symbol BVCBO BVCEO BVEBO ICBO IEBO
Min. 100 80 5 - - 180
Typ. - - - - - - - - 0.15 100 20
Max. - - - 1 1 390 390 390 0.4 - -
Unit V V V µA µA - - - V MHz pF IC=50µA IC=1mA IE=50µA VCB=80V VEB=4V
Conditions
hFE
82 120
VCE=3V, IC=0.5A
VCE(sat) fT Cob
- - -
IC/IB=500mA/20mA VCE=10V, IE=-50mA, f=100MHz VCB=10V, IE=0A, f=1MHz
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
!Packaging specifications and hFE
Package Code Type 2SD1898 2SD1733 2SD1768S 2SD1863 hFE PQR PQR QR R - - - - - - Basic ordering unit (pieces) T100 1000 Taping TL 2500 - TP 5000 - - TV2 2500 - - -
hFE values are classified as follows :
Item hFE P 82~180 Q 120~270 R 180~390
!Electrical characteristic curves
1000
COLLECTOR CURRENT : IC (mA)
Ta=25°C VCE=5V
COLLECTOR CURRENT : IC (A)
Ta=25°C 1.0 0.8 0.6 0.4 1mA 0.2 0 0 IB=0mA 10 6mA 5mA 4mA 3mA 2mA
DC CURRENT GAIN : hFE
Ta=25°C
100
1000 VCE=3V 1V 100
10
1
0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 BASE TO EMITTER VOLTAGE : VBE (V)
2
4
6
8
0 0
10
100
1000
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics
Fig.3 DC current gain vs. collector current
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
TRANSITION FREQUENCY : fT (MHz)
500 200 100 50 20 10 5 2 1 2 5 10 20
2.0 1.0 0.5 0.2 0.1 0.05 0.02 0.01 0 10 100 1000 IC/IB=20/1 10/1
COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)
Ta=25°C
Ta=25°C VCE=5V
1000
Ta=25°C f=1MHz IE=0A Ic=0A
100
10
50 100 200 500 1000
1 0.1 0.2
0.5
1
2
5
10
20
50 100
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : -IE (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)
Fig.4 Collector-emitter saturation voltage vs. collector current
Fig.5 Gain bandwidth product vs. emitter current
Fig.6 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
2SD1898 / 2SD1733 / 2SD1768S / 2SD1863
Transistors
10 5
COLLECTOR CURRENT : IC (A)
2 1 500m 200m 100m 50m 20m 10m 5m
COLLECTOR CURRENT : IC (A)
Ic Max (Pulse)
Pw
DC
Ta=25°C Single non-repetitive pulse
10 5 2 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 0.1 0.2 0.5 1 Ic Max (Pulse)
DC
Ta=25°C Single non-repetitive pulse
Pw
=1
S 0m
Pw 0 =1
=1
S 0m
Pw m 00 =1
S 0m
S
2m 1m 0.1 0.2 0.5 1 2
5 10 20 50 100 200 5001000
2
5 10 20 50 100200 500 000 1
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.7 Safe operating area (2SD1863)
Fig.8 Safe operating area (2SD1898)
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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