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Part: 2SD1864
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download 2SD1864 datasheet File size : 198 kB
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2SD1760 / 2SD1864
Transistors
Power Transistor (50V, 3A)
2SD1760 / 2SD1864
!Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements the 2SB1184 / 2SB1243. !External dimensions (Units : mm)
2SD1760
1.5±0.3
6.5±0.2 5.1 +0.2 -0.1 C0.5 2.3 +0.2 -0.1 0.5±0.1
2SD1864
6.8±0.2 2.5±0.2
5.5 +0.3 -0.1
9.5±0.5
0.9
1.5
!Structure Epitaxial planar type NPN silicon transistor
0.9 0.55±0.1 2.3±0.2 2.3±0.2 1.0±0.2
(1) (2) (3)
0.5±0.1
2.54 2.54
14.5±0.5
0.75
0.65±0.1
2.5
0.65Max.
1.0
4.4±0.2
0.9
(1) (2) (3)
1.05
0.45±0.1
ROHM : CPT3 EIAJ : SC-63
(1) Base (2) Collector (3) Emitter
ROHM : ATV
(1) Emitter (2) Collector (3) Base
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation 2SD1760 2SD1864 Symbol VCBO VCEO VEBO IC Limits 60 50 5 3 4.5 15 1 150 -55~+150 Unit V V V A (DC) A (Pulse)
1
PC Tj Tstg
W (Tc=25°C)2 W °C °C
Junction temperature Storage temperature
1 Single pulse, PW=100ms 2 Printed circuit board, 1.7mm thick, collector copper plating 100mm2 or larger.
2SD1760 / 2SD1864
Transistors
!Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance
Measured using pulse current.
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT Cob
Min. 60 50 5 - - - 82 - -
Typ. - - - - - 0.5 - 90 40
Max. - - - 1 1 1 390 - -
Unit V V V µA µA V - MHz pF IC=50µA IC=1mA IE=50µA VCB=40V VEB=4V IC/IB=2A/0.2A
Conditions
VCE=3V, IC=0.5A VCE=5V, IE=-500mA, f=30MHz VCB=10V, IE=0A, f=1MHz
!Packaging specifications and hFE
Package Code Type 2SD1760 2SD1864 hFE PQR PQR - Basic ordering unit (pieces) TL 2500 Taping TV2 2500 -
hFE values are classified as follows:
Item hFE P 82~180 Q 120~270 R 180~390
!Electrical characteristic curves
10 5
3.0
VCE = 3V
COLLECTOR CURRENT : IC (A)
Ta = 25°C
45mA 50mA
COLLECTOR CURRENT : IC (A)
2.5 2.0
COLLECTOR CURRENT : IC (A)
2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 BASE TO EMITTER VOLTAGE : VBE (V) Ta = 100°C 25°C -25°C
40mA 35mA 30mA 25mA 20mA
3.0 2.5 2.0 1.5
20mA 15mA
50mA 45mA 40mA 35mA 30mA 25mA
Ta = 25°C
15mA
1.5
10mA
10mA
1.0 0.5 0 0
5mA
1.0
IB = 5mA
0.5 0 0
PC = 15W
IB = 0mA
1
2
3
4
5
10
20
30
40
50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation characteristics
1000 500
DC CURRENT GAIN : hFE
Fig.2 Grounded emitter output characteristics ( )
1000 500
DC CURRENT GAIN : hFE
Fig.3 Grounded-emitter output characteristics( )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Ta = 25°C
10 Ta = 25°C 5 2 1 0.5 0.2 IC/IB = 50 0.1 0.05 0.02 0.01 0.010.02 0.05 0.1 0.2 0.5 1 2 5 10 20 10
VCE = 3V
200 100 50
VCE = 5V
200 100 50 20 10 5 2
Ta = 100°C
3V 20 10 5 2 1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10
25°C -25°C
1 0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
10
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.4 DC current gain vs. collector current( )
Fig.5 DC current gain vs. collector curren( )
Fig.6 Collector-emitter saturation voltage vs. collector current
2SD1760 / 2SD1864
Transistors
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) BASE SATURATION VOLTAGE : VBE (sat) (V)
5 2 1 0.5 0.2 0.1 0.05 0.02 VCE (sat) 1 2 5 10 Ta = 100°C 25°C Ta = -25°C VBE (sat) 25°C 100°C
TRANSITION FREQUENCY : fT (MHz)
lC/lB = 10
500 200 100 50 20 10 5 2 1 1 2 5 10 20
Ta = 25°C VCE = 5V
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
10
1000
1000 500 200 100 50 20 10 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100
Ta = 25°C f = 1MHz IE = 0A
-25°C
0.01 0.01 0.02 0.05 0.1 0.2 0.5
50 100 200
5001000
COLLECTOR CURRENT : IC (A)
EMITTER CURRENT : -IE (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector-emitter saturation voltage vs. collector current Base-emitter saturation voltage vs. collector current
Fig.8 Gain bandwidth product vs. emitter current
Fig.9 Collector output capacitance vs. collector-base voltage
TRANSIENT THERMAL RESISTANCE : Rth (°C/W)
5
PW
COLLECTOR CURRENT : IC (A)
5
COLLECTOR CURRENT : IC (A)
2
PW
VCE=5v IC=0.2A 100
Pw =1
Pw
2 1
DC
=1
0m
=1
0m
00
s
1 0.5 DC 0.2 0.1 0.05 0.02 Ta = 25°C Single pulse 0.01 0.1 0.2 0.5 1
m
=1
00
s
s
ms
0.5 0.2 0.1 0.05 Ta=25°C Single nonrepetitive 0.02 pulse 0.2 0.5 1
10
1
2
5
10 20
50 100
0.1
1
10
100
1sec 10sec 100sec
2
5
10 20
50 100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
TIME : T (ms)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.10 Safe operating area (2SD1760)
Fig.11 Transient thermal resistance (2SD1760)
Fig.12 Safe operating area (2SD1864)
TRANSIENT THERMAL RESISTANCE : Rth (°C/W)
100
10
1
0.1
1
10
100
1
10sec 100sec 1000sec
TIME : T (ms)
Fig.13 Transient thermal resistance (2SD1864)
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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