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Part: 2SD1867
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download 2SD1867 datasheet File size : 198 kB
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Datasheet text preview:
2SD2195 / 2SD1980 / 2SD1867
Transistors
Power Transistor (100V , 2A)
2SD2195 / 2SD1980 / 2SD1867
Features 1) Darlington connection for high DC current gain. 2) Built-in resistor between base and emitter. 3) Built-in damper diode. 4) Complements the 2SB1580 / 2SB1316. External dimensions (Units : mm)
2SD2195
1.0
1.5 0.4
4.0 2.5 0.5
(1)
3.0
0.5
(3)
1.5 0.4
1.5
4.5
1.6
(2)
Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current 2SD2195 Collector power dissipation 2SD1980 PC Symbol VCBO VCEO VEBO IC Limits 100 100 6 2 3 2 1 10 1 150
-55~+150
ROHM : MPT3 EIAJ : SC-62
Unit V V V A(DC) A(Pulse) 1 W 2 W(Tc=25°C) W °C °C 3
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
(1)
2.3
0.9
0.75
2SD1980
0.4
5.5
1.5
5.1
(2)
0.9
(3) 2.3 0.65
2SD1867 Junction temperature
Storage temperature
Tj
Tstg
C0.5
1.0
0.5
0.5
1.5 2.5 9.5
2.3
1 Single pulse Pw=100ms 2 When mounted on a 40 x 40 x 0.7 mm ceramic board. 3 Printed circuit board, 1.7mm thick, collector plating 100mm2 or larger.
0.8Min.
Packaging specifications and hFE
Type Package hFE Marking Code Basic ordering unit (pieces)
Denotes hFE
ROHM : CPT3 EIAJ : SC-63
2SD1867 ATV 1k~10k - TV2 2500
2SD2195 MPT3 1k~10k DP T100 1000
2SD1980 CPT3 1k~10k - TL 2500
2SD1867
6.8
2.5
Equivalent circuit
C
0.65Max.
1.0
0.9
0.5
B
(1)
(2) 2.54
(3) 2.54 1.05 0.45
R1 R1 3.5k R2 300
R2 E B : Base C : Collector E : Emitter
Taping specifications
14.5
4.4
ROHM : ATV
Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltag DC current transfer ratio Output capacitance
Measured using pulse current.
Symbol BVCBO BVCEO ICBO IEBO VCE(sat) hFE Cob
Min. 100 100 - - - 1000 -
Typ. - - - - - - 25
Max. - - 10 3 1.5 10000 -
Unit V V µA mA V - pF
Conditions IC = 50µA IC = 5mA VCB = 100V VEB = 5V IC = 1A , IB = 1mA VCE = 2V , IC = 1A VCB = 10V , IE = 0A , f = 1MHz
6.5
(1) Base(Gate) (2) Collector(Drain) (3) Emitter(Source)
(1) Emitter (2) Collector (3) Base
Others parts begin by 2s
2S-1 2S-2 2S-3 2S-4 2S-5 2S-6 2S-7 2S-8 2S-9 2S-10 2S-11 2S-12 2S-13 2S-14 2S-15 2S-16 2S-17 2S-18 2S-19 2S-20 2S-21 2S-22 2S-23 2S-24 2S-25 2S-26 2S-27 2S-28 2S-29 2S-30 2S-31 2S-32 2S-33 2S-34 2S-35 2S-36 2S-37 2S-38 2S-39 2S-40 2S-41 2S-42 2S-43 2S-44 2S-45 2S-46 2S-47 2S-48 2S-49
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