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Part: BAV99
Category:
Discrete
-> Diodes & Rectifiers
Description:
Company: ROHM Electronics
Datasheet: Download BAV99 datasheet File size : 66 kB
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Datasheet text preview:
BAV70 / BAW56 / BAV99
Diodes
Switching diode
BAV70 / BAW56 / BAV99
This product is available only outside of Japan.
Application Ultra high speed switching
External dimensions (Units : mm)
2.9±0.2
2.4±0.2
1.3+0.2 -0.1
Features 1) Small surface mounting type. (SSD3) 2) High speed. (trr=1.5ns Typ.) 3) Four types of circuit configurations are available.
1.9±0.2 0.95 0.95
0.95 +0.2 -0.1 0.45±0.1
0~0.1 0.2Min.
Construction Silicon epitaxial planar
(All leads have the same dimensions.) 0.15 +0.1 -0.69 0.4 +0.1 -0.05
ROHM : SSD3 EIAJ : - JEDEC : SOT-23
Marking (Type No.)
Product name BAV70 BAW56 BAV99
(Ex.) BAV70
Type No. RA4 RA1 RA7
RA4
Circuits
BAV70
BAW56
BAV99
BAV70 / BAW56 / BAV99
Diodes
Absolute maximum ratings (Ta=25°C)
Peak reverse voltage VRM (V) 75 85 85 DC reverse voltage VR (V) 70 70 75 Peak forward current IFM (mA) 450 450 450 Mean rectifying current IO (mA) - - - Surge current (1µs) Isurge (A) 4 4 4 Storage Power Junction dissipation temperature temperature (TOTAL) Tj (°C) Tstg (°C) Pd (mW) 300 225 300 150 150 150 -55~+150 -55~+150 -55~+150
Type
P / N Type
BAV70 BAW56 BAV99
N P N
Electrical characteristics (Ta=25°C)
Forward voltage Type VF (V) Max. 1.25 1.25 1.25 Cond. IF (mA) 150 150 150 Reverse current IR (µA) Max. 2.5 1.0 1.0 Cond. VR (V) 70 75 75 Capacitance between terminals CT (pF) Max. 1.5 2.0 1.5 Cond. VR (V) 0 0 0 f (MHz) 1 1 1 trr (ns) Max. 4 4 4 Reverse recovery time Cond. VR (V) 10 10 10 IF (mA) 10 10 10
BAV70 BAW56 BAV99
Electrical characteristic curves (Ta=25°C)
125
(%)
50
FORWARD CURRENT : IF (mA)
1000 Ta=100°C
REVERSE CURRENT : IR (nA)
Max.
POWER DISSIPATION : Pd / Pd
100
20 10 5 2 1 0.5 0.2 Ta=85°C 50°C 25°C 0°C -30°C
100
75°C 50°C 25°C
75
10
50
1
0°C -25°C
25
0.1
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE : Ta (°C)
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01
0
10
20
30
40
50
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
Fig.1 Power attenuation curve
Fig.2 Forward characteristics (P Type)
Fig.3 Reverse characteristics (P Type)
50
1000 FORWARD CURRENT : IF (mA) Ta=100°C 75°C 50°C 10 25°C 0°C -25°C 0.1
CAPACITANCE BETWEEN TERMINALS : CT (pF)
f=1MHz 4
10 5 2 1 0.5 0.2 0.1 0
Ta=85°C 50°C 25°C 0°C -30°C
REVERSE CURRENT : IR (nA)
20
100
1
2 P Type
N Type 0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.01 0
10
20
30
40
50
60
70
80
0
2
4
6
8
10 12 14 16 18 20
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig.4 Forward characteristics (N Type)
Fig.5 Reverse characteristics (N Type)
Fig.6 Capacitance between terminals characteristics
BAV70 / BAW56 / BAV99
Diodes
10 VR=6V
0.01µF
D.U.T
REVERSE RECOVERY TIME : trr (ns)
9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 N Type 8 9 10 P Type
5 PULSE GENERATOR OUTPUT 50 SAMPLING 50 OSCILLOSCOPE
INPUT
100ns
FORWARD CURRENT : IF (mA)
OUTPUT
trr 0
0.1IR
Fig.7 Reverse recovery time
IR
Fig.8 Reverse recovery time (trr) measurement circuit
Others parts begin by ba
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