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Details, datasheet, quote on part number:DT124TUA
 
 
Part:DT124TUA
Category:Discrete => Transistors
Description:Digital Transistors ( Built in Resistor )
Company:ROHM Electronics
Datasheet:Download DT124TUA datasheet   File size : 126 kB
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Datasheet text preview:
Transistors

DTA124TH / DTA124TE / DTA124TUA / DTA124TKA / DTA124TSA

Digital transistors (built in resistor)
DTA124TH / DTA124TE / DT124TUA / DTA124TKA / DTA124TSA
!Features 1) Built-in circuit enables the configuration of an inverter circuit without connecting external input resistors. (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making device design easy. !External dimensions (Units : mm)
DTA124TH
0.27
1.6 0.85
(1)

0.5 0.5

(3)

(2)

0.12

0to0.1

0.7

1.0

1.6

ROHM : EMT3H

(1) Emitter (2) Base (3) Collector

Addreviated symbol : 95

DTA124TE
0.3
(3)

(1) (2)

0.2 0.5 0.5

1.0

0.8 1.6

0.15

0.2

0.55

0.1Min.

0to0.1

!Equivalent circuit
ROHM : EMT3

0.7

1.6

Addreviated symbol : 95

(1) Emitter (2) Base (3) Collector

C B R1 E

DTA124TUA
(1)

0.3

(3)

1.25 2.1

0.15

0.2

(2)

B : Base C : Collector E : Emitter
ROHM : UMT3 EIAJ : SC-70

0.1to0.4

0to0.1

0.7

0.9

1.3

2.0

All terminals have same dimensions

0.65 0.65

(1) Emitter (2) Base (3) Collector

Addreviated symbol : 95

DTA124TKA
(1)

All terminals have same dimensions
0.4
(3) (2)

1.6 2.8

0.15

0.8

1.1

0.95 0.95 1.9 2.9

ROHM : SMT3 EIAJ : SC-59

0.3to0.6

(1) Emitter (2) Base (3) Collector

Addreviated symbol : 95

DTA124TSA
3

4

0to0.1

2

(15Min.)

3Min.
0.45 2.5 5 0.5 0.45

ROHM : SPT EIAJ : SC-72

(1) (2) (3)

(1) Emitter (2) Collector (3) Base

Transistors
!Absolute maximum ratings (Ta=25°C)
Parameter Symbol H VCBO VCEO VEBO IC PC Tj Tstg 150

DTA124TH / DTA124TE / DTA124TUA / DTA124TKA / DTA124TSA
Limits(DTA124T ) E UA -50 -50 -5 -100 200 150 -55~+150 300 KA SA V V V mA mW °C °C Unit

Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature

!Electrical characteristics (Ta=25°C)
Parameter Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT Min. -50 -50 -5 100 15.4 Typ. 250 22 250 Max. -0.5 -0.5 -0.3 600 28.6 Unit V V V µA µA V k MHz IC=-50µA IC=-1mA IE=-50µA VCB=-50V VEB=-4V IC/IB=-5mA/-0.5mA VCE=-5V, IC=-1mA VCE=-10V, IE=5mA, f=100MHz Conditions

Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency
Transition frequency of the device

!Packaging specifications
Package Package type Code Basic ordering unit (pieces)
EMT3H

EMT3

UMT3

SMT3

SPT

Taping
T2L 8000

Taping
TL 3000 -

Taping
T106 3000 -

Taping
T146 3000 -

Taping
TP 5000 -

Part No. DTA124TH DTA124TE DTA124TUA DTA124TKA DTA124TSA

-

-

-

!Electrical characteristic curves
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1k 500 VCE=-5V

-1 -500m -200m -100m -50m -20m -10m -5m -2m
Ta=100°C 25°C -40°C

IC/IB=10

DC CURRENT GAIN : hFE

200 100 50 20 10 5 2 1 -100µ -200µ -500µ -1m -2m -5m -10m -20m -50m -100m Ta=100°C 25°C -40°C

-1m -10µ -20µ -50µ -100µ -200µ -500µ -1m -2m -5m -10m COLLECTOR CURRENT : IC (A)

COLLECTOR URRENT : IC (A)

Fig.1 DC current gain vs. collector current

Fig.2 Collector-emitter saturation voltage vs. collector current