|
|
Part: DTC114ESA
Category:
Discrete
-> Transistors
-> Bipolar
-> General Purpose
-> PNP
Description: Digital Transistor (built-in Resistors)
Company: ROHM Electronics
Datasheet: Download DTC114ESA datasheet File size : 104 kB
Request For quote: Find where to buy DTC114ESA
Datasheet text preview:
Transistors
DTC114EM / DTC114EE / DTC114EUA DTC114ECA / DTC114EKA / DTC114ESA
Digital transistors (built-in resistors)
DTC114EM / DTC114EE / DTC114EUA / DTC114ECA / DTC114EKA / DTC114ESA
!Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. !Equivalent circuit
R1 IN R2
OUT
GND
IN GND
OUT
!Structure NPN digital transistor (with built-in resistors)
!External dimensions (Units : mm)
DTC114EM
0.2 1.2 0.8
(2) (3) (1)
DTC114EE
0.2
1.6±0.2 1.0±0.1 +0 1 0.2-0..05 (1) 0.7±0.1 0.55±0.1
1.2 0.32
0.4 0.4
0.22
0.8
0.5 0.5
+0.1 0.2-0.05
0.5
0.8±0.1
1.6±0.2
(2)
0.13 0~0.1
0.15Max.
ROHM : VMT3
Abbreviated symbol : 24
+0.1 0.3 -0.05
0.15±0.05
ROHM : EMT3
Abbreviated symbol : 24
DTC114EUA
2.0±0.2 1.3±0.1 0.65 0.65 (1) (2) 0.2 0.9±0.1 0.7±0.1
DTC114ECA
2.9 1.9 0.95 0.95
(1) (2)
0.95 0.45
1.25±0.1
2.1±0.1
(3)
(3)
1.3
0~0.1
2.4
0.1Min.
ROHM : UMT3 EIAJ : SC-70
0.3+0.1 0.15±0.05 -0 All terminals have same dimensions
(1) GND (2) IN (3) OUT ROHM : SST3
0.15 0.4
0.2Min.
0.1Min.
(1) IN (2) GND (3) OUT
0~0.1
(3)
(1) GND (2) IN (3) OUT
0~0.1
Each lead has same dimensions
Abbreviated symbol : 24
(1) GND (2) IN (3) OUT
Abbreviated symbol : 24
DTC114EKA
2.9±0.2 1.9±0.2 0.95 0.95 (1) (2)
1.6+0.2 -0.1
2.8±0.2
0~0.1
(15Min.)
0.45+0.15 -0.05
(3) +0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals have same dimensions
0.3Min.
3Min.
0.8±0.1
3±0.2
1.1+0.2 -0.1
DTC114ESA
4±0.2
2±0.2
ROHM : SMT3 EIAJ : SC-59
(1) GND (2) IN (3) OUT
5
2.5 +0.4 -0.1
0.5
0.45 +0.15 -0.05
Abbreviated symbol : 24
ROHM : SPT EIAJ : SC-72
(1) (2) (3)
(1) GND (2) OUT (3) IN
Transistors
!Absolute maximum ratings (Ta=25°C)
Parameter Symbol M E VCC VIN IO IC(Max.) Pd Tj Tstg 150
DTC114EM / DTC114EE / DTC114EUA DTC114ECA / DTC114EKA / DTC114ESA
Limits(DTC114E UA 50 -10~+40 50 100 200 150 -55~+150 300 mA mW °C °C ) CA KA SA V V
Unit
Supply voltage Input voltage Output current Power dissipation Junction temperature Storage temperature
!Electrical characteristics (Ta=25°C)
Parameter Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. - 3 - - - 30 7 0.8 - Typ. - - 0.1 - - - 10 1 250 Max. 0.5 - 0.3 0.88 0.5 - 13 1.2 - V V mA µA - k - MHz Unit Conditions VCC=5V, IO=100µA VO=0.3V, IO=10mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA - - VCE=10V, IE=-5mA, f=100MHz
Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency
Transition frequency of the device
!Packaging specifications
Package Packaging type Code Basic ordering unit (pieces)
VMT3 EMT3 UMT3 SST3 SMT3 SPT
Taping
T2L 8000
Taping
TL 3000 -
Taping
T106 3000 - -
Taping
T116 3000 - - -
Taping
T146 3000 - - - -
Taping
TP 5000 - - - - -
Type DTC114EM DTC114EE DTC114EUA DTC114ECA DTC114EKA DTC114ESA
- - - - -
- - - -
- - - - -
-
Transistors
!Electrical characteristic curves
100 50
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
DTC114EM / DTC114EE / DTC114EUA DTC114ECA / DTC114EKA / DTC114ESA
VO=0.3V 10m 5m 2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Ta=100°C 25°C -40°C VCC=5V 1k 500
DC CURRENT GAIN : GI
VO=5V Ta=100°C 25°C -40°C
20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Ta=-40°C 25°C 100°C
200 100 50 20 10 5 2
0.5
1.0
1.5
2.0
2.5
3.0
1 100µ 200µ 500µ 1m 2m
5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
Fig.2 Output current vs. input voltage (OFF characteristics)
Fig.3 DC current gain vs. output current
1 500m
OUTPUT VOLTAGE : VO(on) (V)
lO/lI=20 Ta=100°C 25°C -40°C
200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
Others parts begin by dt
|
|
|
