|
|
Part: DTC114GKA
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download DTC114GKA datasheet File size : 104 kB
Request For quote: Find where to buy DTC114GKA
Datasheet text preview:
DTC114GUA / DTC114GKA / DTC114GSA
Transistors
Digital transistors (built-in resistor)
DTC114GUA / DTC114GKA / DTC114GSA
!Features 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set for operation, making device design easy. 3) Higher mounting densities can be achieved. !External dimensions (Units : mm)
0.65 0.65 0.7 0.8
0~0.1
DTC114GUA
0.3
(3)
(1)
1.25 2.1
0.15 0.2
(2)
0.1Min.
0~0.1
Each lead has same dimensions
!Equivalent circuit
B
R
ROHM : UMT3 EIAJ : SC-70
(1) Emitter (2) Base (3) Collector
(1)
C
DTC114GKA
0.4
E
E : Emitter C : Collector B : Base
(3) (2)
1.6 2.8
0.15
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation DTC114GUA / DTC114GKA DTC114GSA Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 50 50 5 100 200 300 150 -55~+150 Unit V V V mA mW °C °C
0.3Min.
Each lead has same dimensions
ROHM : SMT3 EIAJ : SC-59
(1) Emitter (2) Base (3) Collector
2
DTC114GSA
3
4
Junction temperature Storage temperature
(15Min.)
!Package, marking, and packaging specifications
Type Package Marking Packaging code Basic ordering unit (pieces)
DTC114GUA UMT3 K24 T106 3000 DTC114GKA SMT3 K24 T146 3000 DTC114GSA SPT - TP 5000
3Min.
0.45
2.5 5 (1) (2) (3)
0.5 0.45
Taping specifications
ROHM : SPT EIAJ : SC-72
(1) Emitter (2) Collector (3) Base
!Electrical characteristics (Ta=25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R fT Min. 50 50 5 - 300 - 30 7 - Typ. - - - - - - - 10 250 Max. - - - 0.5 580 0.3 - 13 - Unit V V V µA µA V - k MHz Conditions IC=50µA IC=1mA IE=720µA VCB=50V VEB=4V IC=10mA, IB=0.5mA IC=5mA, VCE=5V - VCE=10V, IE=-5mA, f=100MHz
Transition frequency
Transition frequency of the device.
1.1
0.95 0.95 1.9 2.9
0.9
1.3
2.0
Others parts begin by dt
|
|
|
