Details, datasheet, quote on part number: DTC114GSATP
PartDTC114GSATP
CategoryDiscrete Semiconductor Products
TitleTransistor (bjt) - Single, Pre-biased Discrete Semiconductor Product 100mA 50V 300mW NPN - Pre-Biased
Description
CompanyROHM Electronics
DatasheetDownload DTC114GSATP datasheet
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Specifications 
Transistor TypeNPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)100mA
Power - Max300mW
Resistor - Base (R1) (Ohms)10K
Resistor - Emitter Base (R2) (Ohms)-
Vce Saturation (Max) @ Ib, Ic300mV @ 500A, 10mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 5mA, 5V
Frequency - Transition250MHz
Mounting TypeThrough Hole
Package / CaseSC-72 Formed Leads
PackagingTape & Box (TB)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
DTC114GSATP photo

 

Features, Applications

zFeatures 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set for operation, making device design easy. 3) Higher mounting densities can be achieved. zExternal dimensions (Unit : mm)

Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power dissipation DTC114GKA DTC114GSA

Type Package Marking Packaging code Basic ordering unit (pieces)

Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R fT Min. Typ. Max. Unit - k MHz Conditions IE=-5mA, f=100MHz


 

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