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Part: DTC114TKA
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download DTC114TKA datasheet File size : 104 kB
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Datasheet text preview:
Transistors
DTC114TM / DTC114TE / DTC114TUA DTC114TKA / DTC114TSA
Digital transistors (built-in resistor)
DTC114TM / DTC114TE / DTC114TUA / DTC114TKA / DTC114TSA
!Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on/off conditions need to be set for operation, making device design easy. !Equivalent circuit
C B R1 E
B : Base C : Collector E : Emitter
!Structure NPN digital transistor (With single built in resistor)
!External dimensions (Units : mm)
DTC114TM
0.2
1.2 0.32
DTC114TE
1.2 0.8
(2) (3) (1)
1.6±0.2 1.0±0.1 0.7±0.1 0.55±0.1
0.2
0.4 0.4 0.8
+0 1 0.2-0..05 (1)
0.5 0.5
+0.1 0.2-0.05
0.8±0.1 1.6±0.2
0.5
0.22
(2)
0~0.1
0.13 0~0.1
0.15Max.
ROHM : VMT3
ROHM : EMT3
+0.1 0.3 -0.05
0.15±0.05
Abbreviated symbol : 04
Abbreviated symbol : 04
DTC114TUA
2.0±0.2 1.3±0.1 0.65 0.65 (1) (2)
1.25±0.1 2.1±0.1
DTC114TKA
0.9±0.1 0.2 0.7±0.1 (1) 0~0.1
2.9±0.2 1.9±0.2 0.95 0.95 (2)
1.6+0.2 -0.1 2.8±0.2
1.1+0.2 -0.1 0.8±0.1
0.1Min.
(1) Base (2) Emitter (3) Collector
(3)
(1) Emitter (2) Base (3) Collector
0~0.1
(3)
ROHM : UMT3 EIAJ : SC-70
Abbreviated symbol : 04
(1) Emitter (2) Base (3) Collector
0.3Min.
0.3+0.1 0.15±0.05 -0 All terminals have same dimensions
0.1Min.
(3) +0.1 0.15 -0.06 0.4 +0.1 -0.05 All terminals have same dimensions
ROHM : SMT3 EIAJ : SC-59
(1) Emitter (2) Base (3) Collector
Abbreviated symbol : 04
DTC114TSA
3±0.2
4±0.2
2±0.2
(15Min.)
0.45+0.15 -0.05
3Min.
5
2.5 +0.4 -0.1
0.5
0.45 +0.15 -0.05
ROHM : SPT EIAJ : SC-72
(1) (2) (3)
(1) Emitter (2) Collector (3) Base
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Transistors
!Absolute maximum ratings (Ta=25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol M VCBO VCEO VEBO IC PC Tj Tstg 150
DTC114TM / DTC114TE / DTC114TUA DTC114TKA / DTC114TSA
Limits(DTA114T E UA 50 50 5 100 200 150 -55~+150 300 KA ) SA V V V mA mW °C °C
Unit
!Electrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Transition frequency
Transition frequency of the device
Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT
Min. 50 50 5 - - - 100 7 -
Typ. - - - - - - 300 10 250
Max. - - - 0.5 0.5 0.3 600 13 -
Unit V V V µA µA V - k MHz IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V
Conditions
IC/IB=10mA/1mA VCE=5V, IC=1mA - VCE=10V, IE=-5mA, f=100MHz
!Packaging specifications
Package Package type Code Basic ordering unit (pieces)
VMT3
Taping
EMT3
Taping
UMT3
Taping
SMT3
Taping
SPT
Taping
T2L 8000
TL 3000 -
T106 3000 - -
T146 3000 - - -
TP 5000 - - - -
Type DTC114TM DTC114TE DTC114TUA DTC114TKA DTC114TSA
- - - - - - -
- - -
2/3
Transistors
!Electrical characteristic curves
VCE=5V
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
DTC114TM / DTC114TE / DTC114TUA DTC114TKA / DTC114TSA
1 500m 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Ta=100°C 25°C -40°C lC/lB=10
1k 500
DC CURRENT GAIN : hFE
200 100 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Ta=100°C 25°C -40°C
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage vs. collector current
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Others parts begin by dt
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