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Part: EMF18
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download EMF18 datasheet File size : 133 kB
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Datasheet text preview:
EMF18 / UMF18N
Transistors
Power management (dual transistors)
EMF18 / UMF18N
2SA1774 and DTC144EE are housed independently in a EMT or UMT package.
!Application Power management circuit
!External dimensions (Units : mm)
EMF18
0.22
(4) (5) (6) (3) (2) (1)
!Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.
ROHM : EMT6
1.2 1.6
0.13
Each lead has same dimensions
Abbreviated symbol : F18
!Structure Silicon epitaxial planar transistor
UMF18N
(4)
0.65 1.3 0.65 0.7 0.9
(3)
0.5
0.5 0.5 1.0 1.6
0.2
1.25
(3) (2) (1)
2.1
0.15
DTr2 R2
(4)
R1
Tr1
0.1Min.
0to0.1
ROHM : UMT6 EIAJ : SC-88
(5) R1=47k R2=47k (6)
Abbreviated symbol :F18
!Packaging specifications
Type EMF18 UMF18N EMT6 UMT6 Package F18 F18 Marking T2R TR Code 3000 Basic ordering unit (pieces) 8000
(1)
!Equivalent circuits
(6)
Each lead has same dimensions
2.0
(5)
(2)
1/4
EMF18 / UMF18N
Transistors
!Absolute maximum ratings (Ta=25°C) Tr1
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits -60 -50 -6 -150 150 (TOTAL) 150 -55~+150 Unit V V V mA mW °C °C
120mW per element must not be exceeded.
DTr2
Limits Parameter Symbol 50 VCC Supply voltage -10~+40 VIN Input voltage 100 IC Collector current 30 IO Output current 150(TOTAL) PC Power dissipation Tj 150 Junction temperature Tstg -55~+150 Range of storage temperature
1 Characteristics of built-in transistor. 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Unit V V mA mA mW °C °C
1 2
!Electrical characteristics (Ta=25°C) Tr1
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -60 -50 -6 - - - 120 - - Typ. - - - - - - - 140 4 Max. - - - -0.1 -0.1 -0.5 560 - 5 Unit V V V µA µA V - MHz pF IC = -50µA IC = -1mA IE = -50µA VCB = -60V VEB = -6V IC/IB = -50mA/-5mA VCE = -6V, IC = -1mA VCE = -12V, IE = 2mA, f = 100MHz VCB = -12V, IE = 0A, f = 1MHz Conditions
DTr2
Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio
Characteristics of built-in transistor.
Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1
Min. - 3.0 - - - 68 - 32.9 0.8
Typ. - - 100 - - - 250 47 1.0
Max. 0.5 - 300 180 500 - - 61.1 1.2
Unit V V mV µA nA - MHz k -
Conditions VCC=5V, IO=100µA VO=0.3V, IO=2mA VO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA - -
VCE=10V, IE=-5mA, f=100MHz
2/4
EMF18 / UMF18N
Transistors
!Electrical characteristic curves Tr1
-50
COLLECTOR CURRENT : Ic (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Ta = 100°C 25°C -20 -40°C
-10 -5 -2 -1 -0.5 -0.2 -0.1
VCE = -6V
-10
-35.0 Ta = 25°C -31.5 -28.0 -24.5
-100
Ta = 25°C -500 -450 -400 -350 -300
-8
-80
-6
-21.0 -17.5
-60
-250 -200
-4
-14.0 -10.5
-40
-150 -100
-2
-7.0 -3.5µA IB = 0
-20
-50µA IB = 0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
0
-0.4
-0.8
-1.2
-1.6
-2.0
0
-1
-2
-3
-4
-5
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics ( )
Fig.3 Grounded emitter output characteristics ( )
500
Ta = 25°C
VCE = -5V -3V -1V
500
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
-1
Ta = 100°C 25°C
Ta = 25°C
DC CURRENT GAIN : hFE
DC CURRENT GAIN : hFE
-0.5
200
200
-40°C
-0.2
100
100
IC/IB = 50
-0.1
20 10
50
50
-0.05
-0.2
-0.5
-1
-2
-5
-10 -20
-50 -100
VCE = -6V
-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( )
Fig.5 DC current gain vs. collector current ( )
Fig.6 Collector-emitter saturation voltage vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
-1
1000
COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF)
TRANSITION FREQUENCY : fT (MHz)
lC/lB = 10
Ta = 25°C VCE = -12V
20
Cib
10
-0.5
500
Ta = 25°C f = 1MHz IE = 0A IC = 0A
Co b
-0.2
200
5
-0.1
Ta = 100°C 25°C -40°C
100
2
-0.05
50 0.5 1 2 5 10 20 50 100
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
-0.5
-1
-2
-5
-10
-20
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IE (mA)
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V)
Fig.7 Collector-emitter saturation voltage vs. collector current ( )
Fig.8 Gain bandwidth product vs. emitter current
Fig.9 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
3/4
EMF18 / UMF18N
Transistors
DTr2
100 50
INPUT VOLTAGE : VI(on) (V)
OUTPUT CURRENT : Io (A)
VO=0.3V
10m 5m
VCC=5V
1k 500
DC CURRENT GAIN : GI
VO=5V Ta=100°C 25°C -40°C
20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Ta=-40°C 25°C 100°C
2m Ta=100°C 25°C 1m -40°C 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0
200 100 50 20 10 5 2
0.5
1.0
1.5
2.0
2.5
3.0
1 100µ 200µ 500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
Fig.9 Input voltage vs. output current (ON characteristics)
Fig.10 Output current vs. input voltage (OFF characteristics)
Fig.11 DC current gain vs. output current
1 500m
OUTPUT VOLTAGE : VO(on) (V)
lO/lI=20 Ta=100°C 25°C -40°C
200m 100m 50m 20m 10m 5m 2m
1m 100µ 200µ
500µ 1m
2m
5m 10m 20m
50m 100m
OUTPUT CURRENT : IO (A)
Fig.12 Output voltage vs. output current
4/4
Others parts begin by em
EM-1 EM-2 EM-3 EM-4 EM-5 EM-6 EM-7
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