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Part: EMF21
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download EMF21 datasheet File size : 133 kB
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Datasheet text preview:
EMF21 / UMF21N
Transistors
Power management (dual transistors)
EMF21 / UMF21N
2SA2018 and DTC114E are housed independently in a EMT6 or UMT6 package.
Application Power management circuit
External dimensions (Units : mm)
EMF21
0.22
(4) (5) (6) (3) (2) (1)
Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.
ROHM : EMT6
1.2 1.6
0.13
Each lead has same dimensions
Abbreviated symbol : F21
Structure Silicon epitaxial planar transistor
UMF21N
(4)
0.65 1.3 0.65 0.7 0.9
(3)
0.5
0.5 0.5 1.0 1.6
0.2
1.25
(3) (2) (1)
2.1
0.15
DTr2 R2
(4)
R1
Tr1
0.1Min.
0 to 0.1
(5) R1=10k R2=10k
(6)
ROHM : UMT6 EIAJ : SC-88
Abbreviated symbol :F21
Package, marking, and packaging specifications
Type Package Marking Code Basic ordering unit(pieces)
EMF21 EMT6 F21 T2R 8000
UMF21N UMT6 F21 TR 3000
(1)
Equivalent circuits
(6)
Each lead has same dimensions
2.0
(5)
(2)
1/4
EMF21 / UMF21N
Transistors
Absolute maximum ratings (Ta=25°C) Tr1
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Symbol Limits VCBO -15 VCEO -12 VEBO -6 IC -500 Collector current ICP -1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg -55~+150 Range of storage temperature
1 Single pulse PW=1ms 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Unit V V V mA A mW °C °C
1 2
DTr2
Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Limits Symbol 50 VCC -10~+40 VIN 100 IC 50 IO 150(TOTAL) PC Tj 150 Tstg -55~+150 Unit V V mA mA mW °C °C
1 2
1 Characteristics of built-in transistor. 2 Each terminal mounted on a recommended land.
Electrical characteristics (Ta=25°C) Tr1
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. -12 -15 -6 - - - 270 - - Typ. - - - - - -100 - 260 6.5 Max. - - - -100 -100 -250 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=-1mA IC=-10µA IE=-10µA VCB=-15V VEB=-6V IC=-200mA, IB=-10mA VCE=-2V, IC=-10mA VCE=-2V, IE=10mA, f=100MHz VCB=-10V, IE=0mA, f=1MHz
DTr2
Parameter Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. - 3 - - - 30 7 0.8 - Typ. - - 0.1 - - - 10 1 250 Max. 0.5 - 0.3 0.88 0.5 - 13 1.2 - V V mA µA - k - MHz Unit Conditions VCC=5V, IO=100µA VO=0.3V, IO=10mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA - - VCE=10V, IE=-5mA, f=100MHz
Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency
Transition frequency of the device
2/4
EMF21 / UMF21N
Transistors
Electrical characteristic curves Tr1
1000
COLLECTOR CURRENT : IC (mA)
VCE=2V Pulsed
DC CURRENT GAIN : hFE
1000
Ta=125°C Ta=25°C Ta=-40°C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
VCE=2V Pulsed
1000
Ta=25°C Pulsed
100
100
100
IC/IB=50 IC/IB=20
5°C
Ta= -40° C
Ta=25° C
Ta=12
10
10
10
IC/IB=10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
1
10
100
1000
1
1
10
100
1000
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 DC current gain vs.
Fig.3 Collector-emitter saturation voltage
collector current
vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
BASER SATURATION VOLTAGE : VBE (sat) (mV)
1000
100
Ta=25°C
Ta=125°C
1000
Ta=25°C
Ta=-40°C
TRANSITION FREQUENCY : fT (MHz)
IC/IB=20 Pulsed
10000
IC/IB=20 Pulsed
1000
VCE=2V Ta=25°C Pulsed
100
Ta=125°C
Ta=-40°C
10
100
10
1
1
10
100
1000
10
1
10
100
1000
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IE (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( )
Fig.5 Base-emitter saturation voltage
Fig.6 Gain bandwidth product
vs. collector current
vs. emitter current
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000
IE=0A f=1MHz Ta=25°C
100
Cib 10 Cob
1 0.1
1
10
100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.7 Collector output capacitance
vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
3/4
EMF21 / UMF21N
Transistors
DTr2
100 50
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
VO=0.3V
10m 5m 2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0 Ta=100°C 25°C -40°C
VCC=5V
1k 500
DC CURRENT GAIN : GI
VO=5V Ta=100°C 25°C -40°C
20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m Ta=-40°C 25°C 100°C
200 100 50 20 10 5 2
0.5
1.0
1.5
2.0
2.5
3.0
1 100µ 200µ 500µ 1m 2m
5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
Fig.2 Output current vs. input voltage (OFF characteristics)
Fig.3 DC current gain vs. output current
1 500m
OUTPUT VOLTAGE : VO(on) (V)
lO/lI=20 Ta=100°C 25°C -40°C
200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
4/4
Others parts begin by em
EM-1 EM-2 EM-3 EM-4 EM-5 EM-6 EM-7
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