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Part: EMG3
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download EMG3 datasheet File size : 133 kB
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Datasheet text preview:
EMG3 / UMG3N / FMG3A
Transistors
Emitter common (dual digital transistors)
EMG3 / UMG3N / FMG3A
!Features 1) Two DTC143T chips in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. !External dimensions (Units : mm)
EMG3
0.5 0.5 1.0 1.6 0.65 0.65 0.5 1.3 1.1 2.9 0.9 0.8 0.95 0.95 1.9 0.7 2.0
(2) (6)
0.22
(4) (5)
(3) (2) (1)
!Structure Dual NPN digital transistor (each with a single built in resistors)
0.13
1.2 1.6
Each lead has same dimensions
ROHM : EMT5 Abbreviated symbol : G3
The following characteristics apply to both the DTr1 and DTr2.
UMG3N
0.2
(4) (3)
1.25 2.1
!Equivalent circuit
EMG3 / UMG3N
(3) R1 DTr2 (4) (2) (1) R1=4.7k R1 DTr1
0.15
0.1Min.
0to0.1
FMG3A
(3) R1 DTr2 (2) (4) (5) R1=4.7k R1 DTr1 (1)
Each lead has same dimensions
ROHM : UMT5 EIAJ : SC-88A Abbreviated symbol : G3
(5)/(6)
FMG3A
0.3
(2) (3)
(1)
1.6
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector EMG3, UMG3N power dissipation FMG3A Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Limits 50 50 5 100 150 (TOTAL) 300 (TOTAL) 150 -55+150 °C °C Unit V V V mA mW
ROHM : SMT5 EIAJ : SC-74A
0.15
0.3to0.6
2.8
0to0.1
Each lead has same dimensions
Abbreviated symbol : G3
1 2
1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded.
(5)
(4)
(1)
EMG3 / UMG3N / FMG3A
Transistors
!Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO ICBO IEBO VCE (sat) hFE fT R1 50 50 5 - - - 100 - 3.29 - - - - - - 250 250 4.7 - - - 0.5 0.5 0.3 600 - 6.11 V V V µA µA V - k IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V IC/IB=10mA/1mA VCE=5V, IC=1mA Conditions
MHz VCE=10mA, IE=-5mA, f=100MHz -
Transition frequency of the transistor
!Packaging specifications
Package Code Type EMG3 UMG3N FMG3A Basic ordering unit (pieces) T2R 8000 Taping TR 3000 T148 3000
!Electrical characteristic curves
1k 500
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
VCE=5V
1 500m 200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m
lC/lB=20
DC CURRENT GAIN : hFE
200 100 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
Ta=100°C 25°C -40°C
Ta=100°C 25°C -40°C
10m 20m
50m 100m
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage vs. collector current
Others parts begin by em
EM-1 EM-2 EM-3 EM-4 EM-5 EM-6 EM-7
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