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Part: EMG9

Category:
 Discrete
   -> Transistors

Description:

Company: ROHM Electronics

Datasheet: Download EMG9 datasheet     File size : 133 kB

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Datasheet text preview:
EMG9 / UMG9N / FMG9A
Transistors

Emitter common (dual digital transistors)
EMG9 / UMG9N / FMG9A
!Features 1) Two DTC114E in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. !External dimensions (Units : mm)
EMG9

0.22

(4) (5)

(3) (2) (1)

!Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type)

0.13

1.2 1.6

Each lead has same dimensions

ROHM : EMT5 Abbreviated symbol : G9

0.65 0.65

1.3 1.1 2.9 0.9

0.2

(6)

1.25 2.1
0.7

!Equivalent circuit
EMG9 / UMG9N
(3) R1 DTr2 (4) R2 (2) R2 (1) R1=10k R1 R2=10k DTr1

0.15

0.1Min.

FMG9A
(3) R1 DTr2 (2) R2 (4) R2 (5) R1=10k R1 R2=10k DTr1 (1)

0to0.1

ROHM : UMT5 EIAJ : SC-88A Abbreviated symbol : G9

(5)/(6)

FMG9A
0.95 0.95 1.9 0.3
(2) (3)

(1)

1.6

0.15

!Absolute maximum ratings (Ta = 25°C)
Parameter Supply voltage Input voltage Symbol VCC VIN IO IC (Max.) Pd Tj Tstg Limits 50 40 -10 50 100 150 (TOTAL) 300 (TOTAL) 150 -55+150 °C °C Unit V V

2.8
0.8

0.3to0.6

0to0.1

Each lead has same dimensions

ROHM : SMT5 EIAJ : SC-74A Abbreviated symbol : G9

Output current EMG9, UMG9N Power dissipation FMG9A Junction temperature Storage temperature

mA

mW

1 2

1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded.

(5)

(4)

(1)

Each lead has same dimensions

2.0

(2)

The following characteristics apply to both the DTr1 and DTr2.

UMG9N
(4) (3)

0.5

0.5 0.5 1.0 1.6

EMG9 / UMG9N / FMG9A
Transistors
!Electrical characteristics (Ta = 25°C)
Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI (off) VI (on) VO (on) II IO (off) GI fT R1 R2/R1 Min. - 3 - - - 30 - 7 0.8 Typ. - - 0.1 - - - 250 10 1.0 Max. 0.5 - 0.3 0.88 0.5 - - 13 1.2 Unit V V mA µA - MHz k - Conditions VCC=5V, IO=100µA VO=0.3V, IO=10mA IO=10mA, II=0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10mA, IE=-5mA, f=100MHz - -





Transition frequency of the device

!Packaging specifications
Package Code Type EMG9 UMG9N FMG9A Basic ordering unit (pieces) T2R 8000 Taping TR 3000 T148 3000

!Electrical characteristic curves
100 50

VO=0.3V

10m 5m

VCC=5V

1k 500

VO=5V Ta=100°C 25°C -40°C

INPUT VOLTAGE : VI (on) (V)

OUTPUT CURRENT : Io (A)

2m

20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m

DC CURRENT GAIN : GI

1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ 0

Ta=100°C 25°C -40°C

200 100 50 20 10 5 2

Ta=-40°C 25°C 100°C

0.5

1.0

1.5

2.0

2.5

3.0

1 100µ 200µ

500µ 1m

2m

5m 10m 20m 50m 100m

OUTPUT CURRENT : IO (A)

INPUT VOLTAGE : VI (off) (V)

OUTPUT CURRENT : IO (A)

Fig.1 Input voltage vs. output current (ON characteristics)

Fig.2 Output current vs. input voltage (OFF characteristics)

Fig.3 DC current gain vs. output current

1 500m

lO/lI=20 Ta=100°C 25°C -40°C

OUTPUT VOLTAGE : VO (on) (V)

200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m

2m

5m 10m 20m 50m 100m

OUTPUT CURRENT : IO (A)

Fig.4 Output voltage vs. output current




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