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Part: EMH10
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download EMH10 datasheet File size : 133 kB
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Datasheet text preview:
EMH10 / UMH10N / IMH10A
Transistors
General purpose (dual digital transistors)
EMH10 / UMH10N / IMH10A
Features 1) Two DTC123J chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. External dimensions (Units : mm)
EMH10
0.22
(4) (5) (6) (3) (2) (1)
1.2 1.6
0.13
Each lead has same dimensions
Abbreviated symbol : H10
1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.9
0.2
(6)
1.25
0.15
The following characteristics apply to both DTr1 and DTr2.
2.1
0.1Min.
Equivalent circuit
EMH10 / UMH10N
(3) (2) (1) R1 R2 DTr1 DTr2 R2 R1 (4) (5) R1=2.2k R2=47k DTr2 R2 R1 (3) (2) R1=2.2k R2=47k
(6)
0to0.1
Each lead has same dimensions
IMH10A
(4) (5) (6) R 1 R2 DTr1
ROHM : UMT6 EIAJ : SC-88
Abbreviated symbol : H10
IMH10A
0.3
(1)
(4)
(5)
1.6 2.8
0.15
Packaging specifications
Package Code Type EMH10 UMH10N IMH10A - - - Basic ordering unit (pieces) T2R 8000 Taping TN 3000 - T110 3000 - -
0.3to0.6
0to0.1
Each lead has same dimensions
ROHM : SMT6 EIAJ : SC-74
Abbreviated symbol : H10
(3)
(2)
(6)
(1)
(1)
2.0
Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type)
ROHM : EMT6
UMH10N
(4) (5) (2)
0.65
(3)
0.5
0.5 0.5 1.0 1.6
EMH10 / UMH10N / IMH10A
Transistors
Absolute maximum ratings (Ta=25°C)
Parameter Supply voltage Input voltage Symbol VCC VIN IO
IC (Max.)
Limits 50 12 -5 100 100 150 (TOTAL) 300 (TOTAL) -55~+150
Unit V V mA mA mW °C
Output current Power dissipation EMH10,UMH10N IMH10A
Pd Tstg
1 2
Storage temperature
1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded.
Electrical characteristics (Ta=25°C)
Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI (off) VI (on) VO (on) II IO (off) GI fT R1 R2/R1 Min. - 1.1 - - - 80 - 1.54 17 Typ. - - 0.1 - - - 250 2.2 21 Max. 0.5 - 0.3 3.6 0.5 - - 2.86 26 V V mA µA - MHz k - Unit Conditions VCC=5V, IO=100µA VO=0.3V, IO=5mA IO/II=5mA/0.25mA VI=5V VCC=50V, VI=0V VO=5V, IO=10mA VCE=10mA, IE=-5mA, f=100MHz - -
Transition frequency of the device
Electrical characteristic curves
100 50
VO=0.3V
OUTPUT CURRENT : Io (A)
10m 5m 2m
VCC=5V
1k 500
VO=5V Ta=100°C 25°C -40°C
INPUT VOLTAGE : VI (on) (V)
20 10 5 2 1
DC CURRENT GAIN : GI
1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ
200 100 50 20 10 5 2
Ta=-40°C 25°C 100°C
Ta=100°C 25°C -40°C
500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m
1µ 0 0.5 1.0 1.5 2.0 2.5 3.0
1 100µ 200µ 500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI (off) (V)
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
Fig.2 Output current vs. input voltage (OFF characteristics)
Fig.3 DC current gain vs. output current
EMH10 / UMH10N / IMH10A
Transistors
1 500m
lO/lI=20
OUTPUT VOLTAGE : VO (on) (V)
200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m
Ta=100°C 25°C -40°C
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
Others parts begin by em
EM-1 EM-2 EM-3 EM-4 EM-5 EM-6 EM-7
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