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Part: EMH11
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download EMH11 datasheet File size : 133 kB
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Datasheet text preview:
EMH11 / UMH11N / IMH11A
Transistors
General purpose (dual digital transistors)
EMH11 / UMH11N / IMH11A
Features 1) Two DTC114E chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. External dimensions (Units : mm)
EMH11
0.22
(4) (5) (6) (3) (2) (1)
1.2 1.6
0.13
Each lead has same dimensions
Abbreviated symbol : H11
1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.9
0.2
(6)
1.25
0.15
The following characteristics apply to both DTr1 and DTr2.
2.1
0.1Min.
Equivalent circuit
EMH11 / UMH11N
(3) (2) (1) R1 R2 DTr1 DTr2 R2 R1 (4) (5) R1=10k R2=10k DTr2
(6)
0to0.1
Each lead has same dimensions
IMH11A
(4) (5) (6) R1 R2 DTr1
ROHM : UMT6 EIAJ : SC-88
Abbreviated symbol : H11
IMH11A
0.3
(1)
(6)
R2 R1 (3) (2) R1=10k R2=10k
(1)
(4)
(5)
1.6 2.8
0.15
Packaging specifications
Package Code Type EMH11 UMH11N IMH11A - - - Basic ordering unit (pieces) T2R 8000 Taping TN 3000 - T110 3000 - -
0.3to0.6
0to0.1
Each lead has same dimensions
ROHM : SMT6 EIAJ : SC-74
Abbreviated symbol : H11
(3)
(2)
(1)
2.0
(5)
(2)
Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type)
ROHM : EMT6
(4)
0.65
UMH11N
(3)
0.5
0.5 0.5 1.0 1.6
EMH11 / UMH11N / IMH11A
Transistors
Absolute maximum ratings (Ta=25°C)
Parameter Supply voltage Input voltage Output current Collector current Power dissipation EMH11,UMH11N IMH11A
Tj
Symbol VCC VIN IO
IC (Max.)
Limits 50 40 -10 50 100 150 (TOTAL) 300 (TOTAL) 150 -55~+150
Unit V V mA mA mW °C °C
Pd
1 2
Junction temperature Storage temperature
Tstg
1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded.
Electrical characteristics (Ta=25°C)
Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI (off) VI (on) VO (on) II IO (off) GI fT R1 R2/R1 Min. - 3 - - - 30 - 7 0.8 Typ. - - 0.1 - - - 250 10 1 Max. 0.5 - 0.3 0.88 0.5 - - 13 1.2 Unit V V mA µA - MHz k - Conditions VCC=5V, IO=100µA VO=0.3V, IO=10mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10mA, IE=-5mA, f=100MHz - -
Transition frequency of the device
Electrical characteristic curves
100 50
VO=0.3V
OUTPUT CURRENT : Io (A)
10m 5m 2m 1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ
VCC=5V Ta=100°C 25°C -40°C
1k 500
VO=5V Ta=100°C 25°C -40°C
INPUT VOLTAGE : VI (on) (V)
20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m
DC CURRENT GAIN : GI
200 100 50 20 10 5 2 1 100µ 200µ
Ta=-40°C 25°C 100°C
1µ
2m 5m 10m 20m 50m 100m 0 0.5 1 1.5 2 2.5 3
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI (off) (V)
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
Fig.2 Output current vs. input voltage (OFF characteristics)
Fig.3 DC current gain vs. output current
EMH11 / UMH11N / IMH11A
Transistors
1 500m
lO/lI=20 Ta=100°C 25°C -40°C
OUTPUT VOLTAGE : VO (on) (V)
200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
Others parts begin by em
EM-1 EM-2 EM-3 EM-4 EM-5 EM-6 EM-7
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