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Part: EMH2
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download EMH2 datasheet File size : 133 kB
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Datasheet text preview:
EMH2 / UMH2N / IMH2A
Transistors
General purpose (dual digital transistors)
EMH2 / UMH2N / IMH2A
!Features 1) Two DTC144Es chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. !External dimensions (Units : mm)
EMH2
0.22
(4) (5) (6) (3) (2) (1)
1.2 1.6
0.13
All terminals have same dimensions
Abbreviated symbol : H2
1.3 0.65 0.7 0.8 1.1 0.9
0.2
(6)
1.25
The following characteristics apply to both DTr1 and DTr2.
0.15
2.1
!Equivalent circuit
EMH2 / UMH2N
(3) (2) (1) R1 R 2 DTr1 DTr2 R2 R1 (4) (5) R1=47k R2=47k DTr2 R2 R1 (3) (2) R1=47k R2=47k
0.1Min.
0to0.1
IMH2A
(4) (5) (6) R1 R2 DTr1
ROHM : UMT6 EIAJ : SC-88
Abbreviated symbol : H2
IMH2A
0.95 0.95 1.9 2.9
(6)
0.3
(4)
1.6 2.8
0.15
!Packaging specifications
Package Code Type EMH2 UMH2N IMH2A - - - Basic ordering unit (pieces) T2R 8000 Taping TN 3000 - T110 3000 - -
0.3to0.6
0to0.1
All terminals have same dimensions
ROHM : SMT6 EIAJ : SC-74
Abbreviated symbol : H2
(3)
(6)
(1)
(5)
(2)
(1)
(1)
All terminals have same dimensions
2.0
(5)
(2)
!Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type)
ROHM : EMT6
(4)
0.65
UMH2N
(3)
0.5
0.5 0.5 1.0 1.6
EMH2 / UMH2N / IMH2A
Transistors
!Absolute maximum ratings (Ta = 25°C)
Parameter Supply voltage Input voltage Symbol VCC VIN IO IC(Max.) Power dissipation EMH2,UMH2N IMH2A
Tj
Limits 50 40 -10 30 100 150 (TOTAL) 300 (TOTAL)
150
Unit V V
Output current
mA
Pd
mW
°C °C
1 2
Junction temperature Storage temperature
Tstg
-55~+150
1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded.
!Electrical characteristics (Ta = 25°C)
Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI fT R1 R2/R1 Min. - 3 - - - 68 - 32.9 0.8 Typ. - - 0.1 - - - 250 47 1 Max. 0.5 - 0.3 0.18 0.5 - - 61.1 1.2 Unit V V mA µA - MHZ k - Conditions VCC=5V, IO=100µA VO=0.3V, IO=2mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10mA, IE=-5mA, f=100MHz - -
Transition frequency of the device
!Electrical characteristic curves
100
10m
VO=0.3V
50
5m
VCC=5V
1k 500
VO=5V Ta=100°C 25°C -40°C
INPUT VOLTAGE : VI(on) (V)
OUTPUT CURRENT : Io (A)
DC CURRENT GAIN : GI
1.0 1.5 2.0 2.5 3.0
20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
Ta=-40°C 25°C 100°C
500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ 1µ
Ta=100°C 25°C 1m -40°C
2m
200 100 50 20 10 5 2
0
0.5
1 100µ 200µ 500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI (off) (V)
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
Fig.2 Output current vs. input voltage (OFF characteristics)
Fig.3 DC current gain vs. output current
EMH2 / UMH2N / IMH2A
Transistors
1 500m
lO/lI=20 Ta=100°C 25°C -40°C
OUTPUT VOLTAGE : VO(on) (V)
200m 100m 50m 20m 10m 5m 2m 1m
100µ 200µ 500µ 1m
2m
5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
Others parts begin by em
EM-1 EM-2 EM-3 EM-4 EM-5 EM-6 EM-7
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