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Part: EMH3
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download EMH3 datasheet File size : 133 kB
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Datasheet text preview:
EMH3 / UMH3N / IMH3A
Transistors
General purpose (dual digital transistors)
EMH3 / UMH3N / IMH3A
Features 1) Two DTAK13Ts chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. External dimensions (Units : mm)
EMH3
0.22
(4) (5) (6) (3) (2) (1)
1.2 1.6
0.13
Each lead has same dimensions
Structure Epitaxial planar type NPN silicon transistor
Abbreviated symbol : H3 ROHM : EMT6
UMH3N
(4)
0.65 1.3 0.65 0.7 0.8 1.1 0.9
(3)
0.5
0.5 0.5 1.0 1.6 0.95 0.95 1.9 2.9 2.0
0.2
(6)
1.25 2.1
Equivalent circuit
EMH3 / UMH3N
(3) (2) R1 (1)
0.15
0.1Min.
IMH3A
(4) (5) R1 (6)
0to0.1
Each lead has same dimensions
DTr1 DTr2 R1 (5) DTr2 R1 (2)
DTr1
ROHM : UMT6 EIAJ : SC-88
Abbreviated symbol : H3
IMH3A
(1)
(6)
(4)
(6)
(3)
(4)
(5)
1.6 2.8
Packaging specifications
Package Code Type EMH3 UMH3N IMH3A - - - Basic ordering unit (pieces) T2R 8000 Taping TN 3000 - T110 3000 - -
0.15
0.3to0.6
0to0.1
Each lead has same dimensions
ROHM : SMT6 EIAJ : SC-74
Abbreviated symbol : H3
(3)
(2)
R1=4.7k
R1=4.7k
0.3
(1)
(1)
The following characteristics apply to both DTr1 and DTr2.
(5)
(2)
EMH3 / UMH3N / IMH3A
Transistors
Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation EMH3,UMH3N IMH3A Tj Tstg Symbol VCBO VCEO VEBO IC Pc Limits 50 50 5 100 150 (TOTAL) 300 (TOTAL) 150 -55~+150 °C °C Unit V V V mA mW
1 2
Junction temperature Storage temperature
1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded.
Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT R1 Min. 50 50 5 - - - 100 - 3.29 Typ. - - - - - - 250 250 4.7 Max. - - - 0.5 0.5 0.3 600 - 6.11 Unit V V V µA µA V - MHz k IC=50µA IC=1mA IE=50µA VCB=50V VEB=4V IC/IB=5mA/0.25mA VCE=5V, IC=1mA VCE=10mA, IE=-5mA, f=100MHz - Conditions
Transition frequency of the device
Electrical characteristic curves
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
1k 500
VCE=5V
1 500m 200m 100m 50m 20m 10m 5m 2m 1m
lC/lB=20
DC CURRENT GAIN : hFE
200 100 50 20 10 5 2 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m100m
Ta=100°C 25°C -40°C
Ta=100°C 25°C -40°C
100µ 200µ 500µ 1m
2m
5m 10m 20m 50m100m
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage vs. collector current
Others parts begin by em
EM-1 EM-2 EM-3 EM-4 EM-5 EM-6 EM-7
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