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Part: EMH9
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download EMH9 datasheet File size : 133 kB
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Datasheet text preview:
EMH9 / UMH9N / IMH9A
Transistors
General purpose (dual digital transistors)
EMH9 / UMH9N / IMH9A
Features 1) Two DTC114Ys chips in a EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. External dimensions (Units : mm)
EMH9
0.22
(4) (5) (6) (3) (2) (1)
1.2 1.6
0.13
Each lead has same dimensions
Abbreviated symbol : H9
0.2
Structure Epitaxial planar type NPN silicon transistor (Built-in resistor type)
ROHM : EMT6
(4)
0.65 1.3 0.65 0.8 1.1 0.95 0.95 1.9 2.9 0.7 0.9
(3)
UMH9N
0.5
0.5 0.5 1.0 1.6 2.0
(6)
(5)
1.25 2.1
0.15
The following characteristics apply to both DTr1 and DTr2.
0.1Min.
0to0.1
Equivalent circuit
EMH9 / UMH9N
(3) (2) (1) R1 R2 DTr1 DTr2 R2 R1 (4) (5) R1=10k R2=47k DTr2 R2 R1 (3) (2) R1=10k R2=47k
(6)
Each lead has same dimensions
IMH9A
(4) (5) (6) R1 R2 DTr1
ROHM : UMT6 EIAJ : SC-88
Abbreviated symbol : H9
IMH9A
0.3
(1)
(4)
(5)
1.6 2.8
0.15
Packaging specifications
Package Code Type EMH9 UMH9N IMH9A - - - Basic ordering unit (pieces) T2R 8000 Taping TN 3000 - T110 3000 - -
0.3to0.6
0to0.1
Each lead has same dimensions
ROHM : SMT6 EIAJ : SC-74
Abbreviated symbol : H9
(3)
(2)
(6)
(1)
(1)
(2)
EMH9 / UMH9N / IMH9A
Transistors
Absolute maximum ratings (Ta = 25°C)
Parameter Supply voltage Input voltage Symbol VCC VIN IO
IC (Max.)
Limits 50 40 -6 70 100 150 (TOTAL) 300 (TOTAL)
Unit V V
Output current Power dissipation EMH9,UMH9N IMH9A
mA
Pd Tj Tstg
mW °C °C
1 2
Junction temperature Storage temperature
150 -55~+150
1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded.
Electrical characteristics (Ta = 25°C)
Parameter Input voltage Output voltage Input current Output current DC current gain Transition frequency Input resistance Resistance ratio Symbol VI (off) VI (on) VO (on) II IO (off) GI fT R1 R2/R1 Min. - 1.4 - - - 68 - 7 3.7 Typ. - - 0.1 - - - 250 10 4.7 Max. 0.3 - 0.3 0.88 0.5 - - 13 5.7 V V mA µA - MHz k - Unit Conditions VCC=5V, IO=100µA VO=0.3V, IO=1mA IO/II=5mA/0.25mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA VCE=10mA, IE=-5mA, f=100MHz - -
Transition frequency of the device
Electrical characteristic curves
100 50
VO=0.3V
OUTPUT CURRENT : Io (A)
10m 5m 2m
VCC=5V
1k 500
VO=5V Ta=100°C 25°C -40°C
INPUT VOLTAGE : VI (on) (V)
20 10 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m
DC CURRENT GAIN : GI
1m 500µ 200µ 100µ 50µ 20µ 10µ 5µ 2µ
200 100 50 20 10 5 2
Ta=-40°C 25°C 100°C
Ta=100°C 25°C -40°C
2m
5m 10m 20m
50m 100m
1µ 0
0.5
1
1.5
2
2.5
3
1 100µ 200µ 500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI (off) (V)
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
Fig.2 Output current vs. input voltage (OFF characteristics)
Fig.3 DC current gain vs. output current
EMH9 / UMH9N / IMH9A
Transistors
1 500m
lO/lI=20
OUTPUT VOLTAGE : VO (on) (V)
200m 100m 50m 20m 10m 5m 2m 1m 100µ 200µ
Ta=100°C 25°C -40°C
500µ 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
Others parts begin by em
EM-1 EM-2 EM-3 EM-4 EM-5 EM-6 EM-7
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