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Part: FMA3A
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download FMA3A datasheet File size : 60 kB
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Datasheet text preview:
EMA3 / UMA3N / FMA3A
Transistors
Emitter common (dual digital transistors)
EMA3 / UMA3N / FMA3A
!Features 1) Two DTA143Ts in a EMT or UMT or SMT package. 2) Mounting cost and area can be cut in half. !External dimensions (Units : mm)
EMA3
0.22
(4) (5) (3) (2) (1)
!Structure Epitaxial planar type PNP silicon transistor (Built-in resistor type.)
0.13
1.2 1.6
Each lead has same dimensions
ROHM : EMT5 Abbreviated symbol : A3
0.65 0.65
0.2
(6)
1.25
0.15
0.1Min.
EMA3 / UMA3N
R1=4.7k
R1 DTr2 (4) (5)/(6) (3) (2) (1) R1 DTr1
FMA3A
R1=4.7k
R1 DTr2 (2) (1) (3) (4) (5) R1 DTr1
0to0.1
Each lead has same dimensions
ROHM : UMT5 EIAJ : SC-88A Abbreviated symbol : A3
FMA3A
0.95 0.95 1.9 0.3
(2) (3) (4)
0.7
(1)
1.6 2.8
0.15 0.8 1.1
0.3to0.6
0to0.1
Each lead has same dimensions
ROHM : SMT5 EIAJ : SC-74A Abbreviated symbol : A3
(5)
2.9
0.9
!Equivalent circuit
2.1
(1)
1.3
2.0
(2)
The following characteristics apply to both DTr1 and DTr2.
UMA3N
(4) (3)
0.5
0.5 0.5 1.0 1.6
EMA3 / UMA3N / FMA3A
Transistors
!Absolute maximum ratings (Ta = 25°C)
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation EMA3, UMA3N FMA3A Tj Tstg Symbol VCBO VCEO VEBO IC PC Limits -50 -50 -5 -100 150 (TOTAL) 300 (TOTAL) 150 -55+150 °C °C Unit V V V mA mW
1 2
Junction temperature Storage temperature
1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded.
!Electrical characteristics (Ta = 25°C)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current transfer ratio Emitter cutoff current Collector-emitter saturation voltage Transition frequency Input resistance Symbol BVCBO BVCEO BVEBO ICBO hFE IEBO VCE (sat) fT R1 Min. -50 -50 -5 - 100 - - - 3.29 Typ. - - - - 250 - - 250 4.7 Max. - - - -0.5 600 -0.5 -0.3 - 6.11 Unit V V V µA - µA V MHz k IC=-50µA IC=-1mA IE=-50µA VCB=-50V VCE/IC=-5V/-1mA VEB=-4V IC/IB=-5mA/-0.25mA VCE=-10mA, IE=5mA, f=100MHz - Conditions
Transition frequency of the device
!Packaging specifications
Package Code Type EMA3 UMA3N FMA3A Basic ordering unit (pieces) T2R 8000 Taping TR 3000 T148 3000
!Electrical characteristic curves
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
1k 500
VCE=-5V
-1
lC/lB=20 Ta=100°C 25°C -40°C
-500m -200m
DC CURRENT GAIN : hFE
200 100 50 20 10 5 2 1
-100µ -200µ -500µ -1m -2m -5m -10m -20m -50m -100m
Ta=100°C 25°C -40°C
-100m -50m -20m -10m -5m -2m -1m -100µ -200µ -500µ -1m -2m -5m -10m -20m -50m-100m
COLLECTOR CURRENT : IC (A)
COLLECTOR CURRENT : IC (A)
Fig.1 DC current gain vs. collector current
Fig.2 Collector-emitter saturation voltage vs. collector current
Others parts begin by fm
FM-1 FM-2 FM-3 FM-4 FM-5 FM-6 FM-7 FM-8 FM-9 FM-10 FM-11 FM-12 FM-13 FM-14 FM-15 FM-16 FM-17 FM-18 FM-19 FM-20 FM-21 FM-22 FM-23 FM-24 FM-25 FM-26 FM-27 FM-28 FM-29 FM-30 FM-31 FM-32 FM-33 FM-34 FM-35 FM-36 FM-37 FM-38
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