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Details, datasheet, quote on part number:QS5U21
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Datasheet text preview:
QS5U21
Transistor
Small switching (20V, 1.5A)
QS5U21
Features 1) The QS5U21 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Pch MOSFET have a low on-state resistance with a fast switching. 3) Pch MOSFET is reacted a low voltage drive(2.5V) 4) The Independently connected Schottky barrier diode have a low forward voltate. External dimensions (Units : mm)
+ 2.9 - 0.1 1.9 + 0.2 -
0.3 to 0.6
1.0MAX + 0.85-0.1 0.7+ 0.1 -
0.95 0.95
(5)
+ 2.8 - 0.2 + 1.6 - 0.2 0.1
(4)
0 to 0.1
(1)
0.4 +0.15 -0.0
(2)
(3)
0.16+0.1 -0.06
Each lead has same dimensions
Applications Load switch, DC/DC conversion
Abbreviated symbole : U21
Structure Silicon P-channel MOSFET Schottky Barrier DIODE
Equivalent circuit
(5) (4)
2
Packaging specifications
Package Type Code Basic ordering unit (pieces) QS5U21 Taping TR 3000
(1) (2) (3)
1
(1)ANODE (2)SOURCE (3)GATE (4)DRAIN (5)CATHODE
1 ESD PROTECTION DIODE 2 BODY DIODE
Absolute maximum ratings (Ta=25°C)
Parameter
DRAIN-SOURCE VOLTAGE GATE-SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT PULSED SOURCE CURRENT (BODY DIODE) CONTINUOUS PULSED
Symbol
VDSS VGSS ID IDP IS ISP Tch
Limits
-20 ±12 ±1.5 ±6.0 -0.75 -0.3 150
Unit V V A A A A C
PW< 10µs DUTY CYCLE <1% = = PW< 10µs DUTY CYCLE <1% = =
CHANNEL TEMPERATURE REPETITIVE PEAK REVERSE VOLTAGE REVERSE VOLTAGE FORWARD CURRENT FORWARD CURRENT SURGE PEAK JUNCTION TEMPERATURE TOTAL POWER DISSIPATION RANGE OF STRAGE TEMPERATURE
VRM VR IF IFSM Tj
25 20 1.0
3.0 125
V V A A C
60HZ / 1CYC.
PD Tstg
1.0 -40125
W/TOTAL/MOUNTED ON A CERAMIC BOARD
C
1/4
QS5U21
Transistor
Electrical characteristics (Ta=25°C)
Parameter Gate-source leakage
Symbol IGSS
Min. - -20 - -0.7 - - - 1.0 - - - - - - - - - -
Typ. - - - - 160 180 260 - 325 60 40 10 10 35 10 4.2 1.0 1.1
Max. ±10 - -1 -2.0 200 240 340 - - - - - - - - - - -
Unit µA V µA V m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=±12V/ VDS=0V ID=-1mA/ VGS=0V VDS=-20V/ VGS=0V VDS=-10V/ ID=-1mA ID=-1.5A, VGS=-4.5V ID=-1.5A, VGS=-4V ID=-0.75A, VGS=-2.5V VDS=-10V, ID=-0.75A VDS=-10V VGS=0V f=1MHz ID=-0.75A VDD -15 VGS=-4.5V RL=20 RGS=10 VDD
Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current
Gate threshold voltage IDSS VGS(th) RDS(on) Pulsed Yfs Pulsed Ciss Coss Crss td(on) Pulsed tr Pulsed td(off) Pulsed tf Pulsed Qg Qgs Qgd
Static drain-source on-state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise Time Turn off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
-15V
VGS =-4.5V
ID=-1.5A
Body diode(source-drain) Forward voltage Foward voltage drop Reverse leakage VF IR - - - - VSD - - -1.2 V IS=-0.75A/ VGS=0V
0.45 200
V µA
IF=1.0A VR=20V
2/4
QS5U21
Transistor
Electrical characteristic curves
10
Drain Current : -ID (A)
1 Ta=125°C 75°C 25°C -20°C 0.1
Static Drain-Source On-State Resistance RDS(on)[m]
VDS=-10V Pulsed
1000
Static Drain-Source On-State Resistance RDS(on)[m]
VGS=-4.5V Pulsed
1000
VGS=-4V Pulsed
100
Ta=125 C 75 C 25 C -25 C
100
Ta=125 C 75 C 25 C -25 C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10 0.1
1
10
10 0.1
1
10
Gate-Source Voltage : VGS[V]
Drain Current : -ID[A]
Drain Current : -ID[A]
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs.Drain Current
Fig.3 Static Drain-Source On-State Resistance vs.Drain Current
1000
Static Drain-Source On-State Resistance RDS(on)[m]
Static Drain-Source On-State Resistance RDS(on)[m]
350 300 250 200 150 100 50 0 0 2 4 6 8
ID=-0.75A -1.5A
100
Ta=125 C 75 C 25 C -25 C
Static Drain-Source On-State Resistance RDS(on)[m]
VGS=-2.5V Pulsed
400
Ta=25 C Pulsed
1000
Ta=25 C Pulsed
100
VGS=-2.5V -4.0V -4.5V
10 0.1
1
10
Drain Current : -ID[A]
10
12
10 0.1
1
10
Fig.4 Static Drain-Source On-State Resistance vs.Drain-Current
Gate-Source Voltage : -VGS[V]
Drain Current : -ID[A]
Fig.5 Static Drain-Source On-State Resistance vs.Gate-Source Voltage
Fig.6 Static Drain-Source On-State Resistance vs.Drain Current
10
Reverse Drain Current : -IDR[A]
VGS=0V Pulsed
10000
Ta=25 C f=1MHZ VGS=0V
1000
Capacitance : C [pF]
1
Ta=125 C 75 C 25 C -25 C
1000
Switching Time : t [ns]
Ta=25 C VDD=-15V VGS=-4.5V RG=10 Pulsed tf
100
td(off)
Ciss 100 Coss Crss
0.1
10
td(on) tr
0.01 0
0.5
1.0
1.5
2.0
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
Source-Drain Voltage : -VSD[V]
Drain-Source Voltage : -VDS[V]
Drain Current : -ID[A]
Fig.7 Reverse Drain Current vs. Source-Drain Current
Fig.8 Typical Capactitance vs.Drain-Source Voltage
Fig.9 Switching Characteristics
3/4
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