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Part: QS5U23
Category:
Discrete
-> Transistors
Description:
Company: ROHM Electronics
Datasheet: Download QS5U23 datasheet File size : 221 kB
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QS5U23 Transistor
Small switching (20V, 1.5A)
QS5U23
Features 1) The QS5U23 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Pch MOSSFET have a low on-state resistance with a fast switching. 3) Pch MOSFET is reacted a low voltage drive(2.5V) 4) The independently connected Schottky barrier diode have a low forward voltage. Applications Load switch , DC/DC conversion
(5) (4)
External dimensions (Units : mm)
2.9+0.1 - 1.9 +0.2 -
0.95 0.95
(5) (4)
2.8 +0.2 - 1.6 +0.2 -0.1
00.1
(1) (2) (3)
+0.1 +0.1 0.16 -0.06 0.4-0.05 Each lead has same dimensions
Abbreviated symbol : U23
Structure · Silicon P-channel MOSFET · Schottky Barrier DIODE Packaging specifications
Package Type Code Basic ordering unit (pieces) QS5U23 Taping TR 3000
(1)
2
(1)ANODE (2)SOURCE (3)GATE (4)DRAIN (5)CATHODE
1
(2)
(3)
1 ESD PROTECTION DIODE 2 BODY DIODE
Equivalent circuit Absolute maximum ratings (Ta=25°C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Channel temperature Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP Limits -20 ±12 ± 1.5 ± 6.0 -0.75 -3.0 150 V V A A A A °C
Pw <10µs, Duty cycle < 1% = = Pw <10µs, Duty cycle < 1% = =
Unit
IS
ISP Tch
Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Total power dissipation Range of strage temperature
VRM VR IF IFSM Tj
30 20 0.5 2.0 125
V V A A
°C
60Hz / 1CYC
PD Tstg
1.0 -40125
W / TOTAL MOUNTED ON A CERAMIC BOARD
°C
0.30.6
1.0MAX 0.85+0.1 - 0.7+0.1 -
1/4
QS5U23 Transistor
Electrical characteristics (Ta=25°C) Parameter Symbol
Min. - -20 - -0.7 - - - 1.0 - - - - - - - - - -
Typ. - - - - 160 180 260 - 325 60 40 10 10 35 10 4.2 1.0 1.1
Max. ±10 - -1 -2.0 200 240 340 - - - - - - - - - - -
Unit µA V µA V m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=±12V/ VDS=0V ID=-1mA/ VGS=0V VDS=-20V/ VGS=0V VDS=-10V/ ID=-1mA ID=-1.5A, VGS=-4.5V ID=-1.5A, VGS=-4V ID=-0.75A, VGS=-2.5V VDS=-10V, ID=-0.75A VDS=-10V VGS=0V f=1MHz ID=-0.75A VDD -15 VGS=-4.5V RL=20 RGS=10 VDD
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS Zero gate voltage drain current
Gate threshold voltage IDSS VGS(th) RDS(on) Pulsed Yfs Pulsed Ciss Coss Crss td(on) Pulsed tr Pulsed td(off) Pulsed tf Pulsed Qg Qgs Qgd
Static drain-source on-state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise Time Turn off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
-15V
VGS =-4.5V
ID=-1.5A
Body diode(source-drain) Forward voltage Foward voltage drop Reverse leakage - VF IR - - - - - VSD - - -1.2 V IS=-0.75A/ VGS=0V
0.36 0.47 100
V V µA
IF=0.1A IF=0.5A VR=20V
2/4
QS5U23 Transistor
Electrical characteristic curves
10
Static Drain-Source On-State Resistance RDS(on)[m]
Drain Current : -ID (A)
1 Ta=125°C 75°C 25°C -25°C 0.1
100
Ta=125 C 75 C 25 C -25 C
Static Drain-Source On-State Resistance RDS(on)[m]
VDS=-10V pulsed
1000
VGS=-4.5V pulsed
1000
VGS=-4V pulsed
100
Ta=125 C 75 C 25 C -25 C
0.01
0.001
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10 0.1
1
10
10 0.1
1
10
Gate-Source Voltage : VGS[V]
Drain Current : -ID[A]
Drain Current : -ID[A]
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
1000
Static Drain-Source On-State Resistance RDS(on)[m]
Static Drain-Source On-State Resistance RDS(on)[m]
350 300 250 200 150 100 50 0 0 2 4 6 8
ID=-0.75A -1.5A
100
Ta=125 C 75 C 25 C -25 C
Static Drain-Source On-State Resistance RDS(on)[m]
VGS=-2.5V pulsed
400
1000 Ta=25 C pulsed
Ta=25 C pulsed
100
VGS=-2.5V -4.0V -4.5V
10 0.1
1
10
Drain Current : -ID[A]
10
12
10 0.1
1
10
Gate-Source Voltage : -VGS[V]
Drain Current : -ID[A]
Fig.4 Static Drain-Source On-State Resistance vs. Drain-Current
Fig.5 Static Drain-Source On-State Resistance vs.Gate-Source Voltage
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
10
Reverse Drain Current : -IDR[A]
VGS=0V pulsed
10000
Ta=25 C f=1MHz VGS=0V
1000
Capacitance : C [pF]
1
Ta=125 C 75 C 25 C -25 C
1000
Switching Time : t [ns]
Ta=25 C VDD=-15V VGS=-4.5V RG=10 pulsed td(off) tf
100
Ciss 100 Coss Crss
0.1
10
td(on) tr
0.01 0
0.5
1.0
1.5
2.0
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
Source-Drain Voltage : -VSD[V]
Drain-Source Voltage : -VDS[V]
Drain Current : -ID[A]
Fig.7 Reverse Drain Current VS. Source-Drain Current
Fig.8 Typical Capactitance vs. Drain-Source Voltage
Fig.9 Switching Characteristics
3/4
Others parts begin by qs
QS-1 QS-2
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